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MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance
参考中译:长波红外AlInAs/GaInAs/InP量子级联激光器的MOVPE生长：生长和材料质量对激光器性能的影响


          

刊名：Aerospace & Defense Technology
作者：Bruce A. Bennett
刊号：877B0292
ISSN：2472-2081
出版年：2022
年卷期：2022, vol.7, no.8
页码：31-32
总页数：2
分类号：V2
语种：eng
文摘：The quality of epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials properties is of critical importance for continuing improvements in QCL performance. Quantum cascade lasers (QCLs) are compact coherent optical sources that emit over a wide wavelength range in the mid- to long-infrared (3-25 μm) as well as into part of the terahertz spectrum. With recent developments of AlInAs/GaInAs/InP QCLs exhibiting watt-class output power levels at room temperature in the mid-wave infrared (MWIR, 3-7 μm) and long-wave infrared (LWIR, 8-12 μm) regions, QCLs have become increasingly attractive for numerous technological applications including infrared countermeasures, free-space communications, and chemical and biological sensing.
参考中译：量子级联激光器(QCL)中外延层的质量对QCL的运行有重要影响，建立外延生长与材料性能之间的关系对于QCL性能的持续改善至关重要。量子级联激光器(QCL)是一种紧凑的相干光源，在中红外到长红外(3-25μm)的宽波长范围内发射，并进入部分太赫兹光谱。随着AlInAs/GaInAs/InP QCL在室温下在中波红外(MWIR，3-7μm)和长波红外(LWIR，8-12μm)区域显示出瓦级输出功率水平的发展，QCL在红外对抗、自由空间通信、化学和生物传感等众多技术应用中越来越受到人们的关注。



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