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期刊


ISSN1350-2409
刊名IEE proceedings
参考译名英国电气工程师学会论文集：电子线路与系统
收藏年代1998～2006

关联期刊参考译名收藏年代
IET Circuits, Devices & SystemsIET电子线路与系统2007～2012


全部

1998 1999 2000 2001 2002 2003
2004 2005 2006

2001, vol.148, no.1 2001, vol.148, no.2 2001, vol.148, no.3 2001, vol.148, no.4 2001, vol.148, no.5 2001, vol.148, no.6

题名作者出版年年卷期
Modelling of self-protected light-triggered thyristorsP. A. Mawby; M. S. Towers20012001, vol.148, no.2
Design of single-gated multiple-mode power semiconductor devicesB. H. Stark; P. R. Palmer20012001, vol.148, no.2
Optimum design of 1.4KV non-punch-through trench IGBTs: The next generation of high-power switching devicesT. Trajkovic; F. Udrea; P. R. Waind; J. Thomson; G. A. J. Amaratunga; W. L. Milne20012001, vol.148, no.2
Clustered insulated gate bipolar transistor, A new power semiconductor deviceM. Sweet; O. Spulber; J. V. Subhas Chandra Bose; L. Ngwendson; K. V. Vershinin; M. M. De Souza20012001, vol.148, no.2
Injection-enhancement effect in a novel, Trench-planar insulated gate bipolar transistorO. Spulber; M. M. De Souza; M. Sweet; J. V. Subhas Chandra Bose; E. M. Sankara Narayanan20012001, vol.148, no.2
Innovative low-power moduleD. A. Hinchley; M. Rodriguez; M. T. Rahimo; S. R. Jones; R. W. Aliwell; F. N. Masana; N. Y. A. Shammas20012001, vol.148, no.2
Electromechanical evaluation of a bondless pressure contact IGBTF. J. Wakeman; G. W. Lockwood20012001, vol.148, no.2
Finite element modelling of thermal fatigue effects on IGBT modulesN. Y. A. Shammas; M. P. Rodriguez; A. T. Plumpton; D. Newconmbe20012001, vol.148, no.2
Recent progress and current issues in SiC semiconductor devices for power applicationsC. M. Johnson; N. G. Wright; M. J. Uren; K. P. Hiton; M. Rahimo; D. A. Hinchley; A. P. Knights; D. J. Morrison; A. B. Horsfall; S. O. Rtolland; A. G. O'Neill20012001, vol.148, no.2



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