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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:硅器件和材料
收藏年代
2000~2023
全部
2000
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2023
2001, vol.101, no.107
2001, vol.101, no.108
2001, vol.101, no.246
2001, vol.101, no.247
2001, vol.101, no.320
2001, vol.101, no.321
2001, vol.101, no.350
2001, vol.101, no.430
2001, vol.101, no.515
2001, vol.101, no.571
2001, vol.101, no.573
2001, vol.101, no.718
2001, vol.101, no.719
题名
作者
出版年
年卷期
High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni SALICIDE
S. Inaba; K. Okano; S. Matsuda; M. Fujiwara; A. Hokazono; K. Adachi; K. Ohuchi; H. Suto; H. Fukui; T. Shimizu; S. Mori; H. Oguma; A. Murakoshi; T. Itani; T. Iinuma; T. Kudo; H. Shibata; S. Taniguchi; T. Matsushita; S. Magoshi; Y. Watanabe
2001
2001, vol.101, no.573
A 100nm node CMOS technology for practical SOC application
Atsuki Ono; Katsuhiko Fukasaku; Tomohiro Hirai; Shin Koyama; Mariko Makabe; Tomoko Matsuda; Michiya Takimoto; Yorinobu Kunimune; Nobuyuki Ikezawa; Yasuhisa Yamada; Fumio Koba; Kiyotaka Imai; Norio Nakamura
2001
2001, vol.101, no.573
SoC CMOS technology for both high reliability and high performance
Yukio Nishda; Hirokazu Sayama; Kazunobu Ohta; Hidekazu Oda; Miki Katayama
2001
2001, vol.101, no.573
A 50-nm CMOS technology for high-speed, low-power, and RF applications in 100-nm node SoC platform
K. Ohnishi; R. Tsuchiya; T. Yamauchi; F. Ootsuka; K. Mitsuda; M. Hase; T. Nakamura; T. Kawahara; T. Onai
2001
2001, vol.101, no.573
70 nm SOI-CMOS of 135 GHzf{sub}(max) with dual offset-implanted source-drain extension structure for RF/analog and logic applications
T. Matsumoto; S. Maeda; K. Ota; Y. Hirano; K. Eikyu; H. Sayama; T. Iwamatsu; K. Yamamoto; T. Katoh; Y. Yamaguchi; T. Ipposhi; H. Oda; S. Maegawa; Y. Inoue; M. Inuishi
2001
2001, vol.101, no.573
Proposal of an artificial fingerprint device (AFD) module using poly-Si thin film transistors with logic LSI compatible process for built-in security
S. Maeda; H. Kuriyama; T. Ipposhi; S. Maegawa; M. Inuishi
2001
2001, vol.101, no.573
Novel ultra high density flash memory with a stacked-surrounding gate transistor (S-SGT) structured cell
Kazushi Kinoshita; Tetsuo Endoh; Takuji Tanigami; Yoshihisa Wada; Kota Sato; Kazuya Yamada; Takashi Yokoyama; Noboru Takeuchi; Kenichi Tanaka; Nobuyoshi Awaya; Keizou Sakiyama; Fujio Masuoka
2001
2001, vol.101, no.573
Analytical model of the trap-density-dependent programming characteristics of MONOS memories and its application to a MONOS memory
Kazumasa Nomoto; Ichiro Fujiwara; Hiroshi Aozasa; Toshio Terano; Toshio Kobayashi
2001
2001, vol.101, no.573
A 185 GHz f{sub}(max) SOI DTMOS with a new metallic overlay-gate for low-power RF applications the format of technical report
Tatsuya Hirose; Youich Momiyama; Masato Kosugi; Hideki Kano; Yuu Watanabe; Toshihiro Sugii
2001
2001, vol.101, no.573
FD/DG-SOI MOSFET - a viable approach to overcoming the device scaling limit
Digh Hisamoto
2001
2001, vol.101, no.573
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