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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:硅器件和材料
收藏年代
2000~2023
全部
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2023
2001, vol.101, no.107
2001, vol.101, no.108
2001, vol.101, no.246
2001, vol.101, no.247
2001, vol.101, no.320
2001, vol.101, no.321
2001, vol.101, no.350
2001, vol.101, no.430
2001, vol.101, no.515
2001, vol.101, no.571
2001, vol.101, no.573
2001, vol.101, no.718
2001, vol.101, no.719
题名
作者
出版年
年卷期
Preparation and characterization of a-and b-axes-oriented epitaxially grown
Takayuki Watanabe; Hiroshi Isa; Atsushi Sasaki; Mamoru Yoshimoto; Minoru Osada; Yuji Noguchi; Masaru Miyayama; Keisuke Saito; Toshimasa Suzuki; Masayuki Fujimoto; Hiroshi Funakubo
2001
2001, vol.101, no.718
New PZT crystallization technique by using flash lamp for FeRAM devices
Koji Yamakawa; Keitaro Imai; Osamu Arisumi; Tsunetoshi Arikado; Masaki Yoshioka; Tatsushi Owada; Katsuya Okumura
2001
2001, vol.101, no.718
Low temperature growth of PZT thin films by MOCVD and effects of seeding
Mamuro Okaniwa; Hironori Fujisawa; Masaru Shimizu; Hirohiko Niu
2001
2001, vol.101, no.718
Low coercive field of SrBi{sub}2Ta{sub}2O{sub}9 by La-substitution and vacancy introduction - control of ferroelectric properties through defect engineering
Masaru Miyayama; Yuji Noguchi
2001
2001, vol.101, no.718
Change of MFIS characteristics of Bi{sub}4Ti{sub}3O{sub}12 thin film compositions
Masaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda
2001
2001, vol.101, no.718
Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using (Bi,La){sub}4Ti{{sub}3O{sub}12 and high capacitance buffer layers
Takuya Suzuki; Eisuke Tokumitsu
2001
2001, vol.101, no.718
1T2C-type ferroelectric memory
Satoru Ogasawara; Hiroshi Ishiwara
2001
2001, vol.101, no.718
Trends of embedded FRAM technology
Seigen Otani; Tooru Endo
2001
2001, vol.101, no.718
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