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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2023



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023

2014, vol.114, no.1 2014, vol.114, no.10 2014, vol.114, no.100 2014, vol.114, no.102 2014, vol.114, no.11 2014, vol.114, no.111
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题名作者出版年年卷期
Analytical formulation of interfacial SiO_2 scavenging in HfO_2/SiO_2/Si stacksXiuyan Li; Takeaki Yajima; Tomonori Nishimura; Kosuke Nagashio; Akira Toriumi20142014, vol.114, no.421
High-precision Wafer-level Cu-Cu Bonding for 3DICsMasashi OKADA; Isao SUGAYA; Hajime MITSUISHI; Hidehiro MAEDA; Shigeto IZUMI; Hosei NAKAHIRA; Kazuya OKAMOTO20142014, vol.114, no.421
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETsChoongHyun. Lee; Tomonori Nishimura; Cimang Lu; Kabuyanagi Shoichi; Akira Toriumi20142014, vol.114, no.421
フラッシュランプアニール法による多結晶Ge tri-gateジャンクションレスp-／n-MOSFET動作の実証臼田宏治; 鎌田善巳; 上牟田雄一; 森貴洋; 小池正浩; 手塚勉20142014, vol.114, no.421
電子·フォノン統合モンテカルロシミュレータによる微細トランジスタの自己発熱析鎌倉良成; インドラヌルアディスシロ; 久木田健太郎; 脇村豪; 木場隼介; 土屋英昭; 森伸也20142014, vol.114, no.421
次世代垂直磁化MTJと非対称磁場補正技術を用いたキャッシュメモリ向け低電力高密度STT-MRAM池上一隆; 野口紘希; 鎌田親義; 天野実; 安部恵子; 櫛田桂一; 北川英二; 落合隆夫; 下村尚治; 板井翔吾; 才田大輔; 田中千加; 川澄篤; 原浩幸; 伊藤順一; 藤田忍20142014, vol.114, no.421
n型トンネルトランジスタにおけるPBTI寿命の正確な予測水林亘; 森貴洋; 福田浩一; 柳永勛; 松川貴; 石川由紀; 遠藤和彦; 大内真一; 塚田順一; 山内洋美; 右田真司; 森田行則; 太田裕之; 昌原明植20142014, vol.114, no.421
16nmノードMetal／high-k FinFETプロセスを用いたワード線オーバードライブアシスト技術による高速シングルポートSRAM藪内誠; 森本薫夫; 塚本康正; 田中信二; 田中浩司; 田中美紀; 新居浩二20142014, vol.114, no.421
非晶質金属ゲート電極FinFETによるばらつき·低周波ノイズ抑制とアナログ·デジタル回路のスケーリング限界の改善松川貴; 福田浩一; 柳永勛; 塚田順一; 山内洋美; 石川由紀; 遠藤和彦; 大内真一; 右田真司; 水林亘; 森田行則; 太田裕之; 昌原明植20142014, vol.114, no.421
Si CMOSプラットフォームにおけるp-n相補型トンネルFinFETの急峻サブスレッショルド·スイングおよび超低オフ電流の実証森田行則; 森貴洋; 福田浩一; 水林亘; 右田真司; 遠藤和彦; 松川貴; 大内真一; 柳永勛; 昌原明植; 太田裕之20142014, vol.114, no.421
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