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期刊


刊名Advanced Electronic Materials
参考译名先进电子材料
收藏年代2019～2025



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2019 2020 2021 2022 2023 2024
2025

2023, vol.9, no.1 2023, vol.9, no.10 2023, vol.9, no.11 2023, vol.9, no.12 2023, vol.9, no.2 2023, vol.9, no.3
2023, vol.9, no.4 2023, vol.9, no.5 2023, vol.9, no.6 2023, vol.9, no.7 2023, vol.9, no.8 2023, vol.9, no.9

题名作者出版年年卷期
Band Structure Engineering of MXenes for Low‐Loss Visible Epsilon‐Near‐Zero Properties by First‐Principles CalculationBo Xu; Hui Xiang; Lai Wei; Jiang Yin; Yineng Huang20232023, vol.9, no.5
Development of a Triboelectric Nanogenerator for Joining of Silver NanorodsMohammad Amin Jalili; Fathallah Karimzadeh; Mohammad Hossein Enayati; Ehsan Naderi Kalali; Noushin Raeisi Kheirabadi20232023, vol.9, no.5
Manipulation of the Ferromagnetism in LaCoO3 Thin Films Through Cation‐Stoichiometric EngineeringTongtong Huang; Yingjie Lyu; Huaixun Huyan; Jinyang Ni; Sahar Saremi; Yujia Wang; Xingxu Yan; Di Yi; Qing He; Lane W. Martin; Hongjun Xiang; Xiaoqing Pan; Pu Yu20232023, vol.9, no.5
Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention ImprovementBong Ho Kim; Song‐Hyeon Kuk; Seong Kwang Kim; Joon Pyo Kim; Yoon‐Je Suh; Jaeyong Jeong; Dae‐Myeong Geum; Seung‐Hyub Baek; Sang Hyeon Kim20232023, vol.9, no.5
Direct Patterning of Conductive Structures on Hydrogels by Laser‐Based Graphitization for Supercapacitor FabricationRikuto Miyakoshi; Shuichiro Hayashi; Mitsuhiro Terakawa20232023, vol.9, no.5
Graphene‐on‐Silicon Hybrid Field‐Effect TransistorsMykola Fomin; Francisco. Pasadas; Enrique G. Marin; Alberto Medina‐Rull; Francisco. G. Ruiz; Andrés. Godoy; Ihor Zadorozhnyi; Guillermo Beltramo; Fabian Brings; Svetlana Vitusevich; Andreas Offenhaeusser; Dmitry Kireev20232023, vol.9, no.5
Dual‐Channel Dielectric Tunability in Highly Textured BaTi0.99Fe0.01O3?δ Ceramics With Micro‐Twin BoundaryFangzhe Li; Hongjun Zhang; Huijiadai Luo; Miao Xing; Lu Cao; Chunlong Wu; Yongchun Zou; Dechang Jia; Yu Zhou; Yong Huang; Hua Ke20232023, vol.9, no.5
Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D ElectrodesJiangli Han; Xin Rong; Chenhui Xu; Yunfeng Deng; Yanhou Geng; Guifang Dong; Lian Duan20232023, vol.9, no.5
Research Process of Carbon Dots in MemristorsHaotian Hao; Lingpeng Yan; Mixue Wang; Yanli Cao; Jintao He; Yongzhen Yang20232023, vol.9, no.5
Competition between Carrier Injection and Structural Distortions in Electron‐Doped Perovskite Nickelate Thin FilmsMarios Hadjimichael; Bernat Mundet; Claribel Domínguez; Adrien Waelchli; Gabriele De Luca; Jonathan Spring; Simon J?hr; Siobhan McKeown Walker; Cinthia Piamonteze; Duncan T. L. Alexander; Jean‐Marc Triscone; Marta Gibert20232023, vol.9, no.5
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