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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2024



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2024, vol.53, no.2 2024, vol.53, no.4 2024, vol.53, no.5 2024, vol.53, no.6 2024, vol.53, no.7 2024, vol.53, no.8
2024, vol.53, no.Suppl.1

题名作者出版年年卷期
High Flat Gain and Broadband Millimeter-Wave Distributed Doherty Low Noise Amplifier for 5G Applications Using GaAs-pHEMT Technology 20242024, vol.53, no.4
Evolution of the Current–Voltage Characteristic of a Bipolar Memristor 20242024, vol.53, no.4
Study of the Photovoltaic Parameters of Inorganic Solar Cells Based on Cu2O and CuO 20242024, vol.53, no.4
Development of a Behavioral Macro-Model for Silicon Piezoresistive Pressure Sensor 20242024, vol.53, no.4
Design and Implementation of a Broadband, Low Voltage, and Low Power GaAs Power Amplifier 20242024, vol.53, no.4
60 GHz MIMO Solar Rectenna for Satellite-Routed Sensor System (SRSS)-Based IoT Services 20242024, vol.53, no.4
Al Islands on Si(111): Growth Temperature, Morphology, and Strain 20242024, vol.53, no.4
A Method for Manufacturing Photosensitive Elements Based on PtSi 20242024, vol.53, no.4
Approximation of the Absorption Spectrum of Indium Phosphide in the Context of Simulation of the Process of Sensation 20242024, vol.53, no.4
Plasma-Chemical and Reactive Ion Etching of Gallium Arsenide in Difluorodichloromethane with Helium 20242024, vol.53, no.4
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