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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2024



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2024, vol.53, no.2 2024, vol.53, no.4 2024, vol.53, no.5 2024, vol.53, no.6 2024, vol.53, no.7 2024, vol.53, no.8
2024, vol.53, no.Suppl.1

题名作者出版年年卷期
Modeling the Functioning of Semiconductor Devices Taking into Account Defects in the Atomic Structure 20242024, vol.53, no.8
Simulation of MHD-Influence on Silicon Melt Flow in the Czochralski Process 20242024, vol.53, no.8
Fault-Tolerant Self-Timed Counters 20242024, vol.53, no.8
Problems of the Synthesis of Connectionist Representations and Continuum Models of the Environment on the Example of Memristors 20242024, vol.53, no.8
Effect of Boron Impurities of Different Concentrations on the Sensory Properties of Carbon Nanotubes with Respect to Carbon Dioxide 20242024, vol.53, no.8
Modeling of the Quantum Dynamics of Frustrated Networks of Josephson Junctions 20242024, vol.53, no.8
Physical and Technological Causes of Channel Inhomogeneity in InSb Single Crystals Heavily Doped with Te 20242024, vol.53, no.8
Impact of Sulphide Passivation of the Substrate on the Photoluminescent Properties of InAs Autoepitaxial Layers 20242024, vol.53, no.8
Electrode Materials Based on Carbon and Metal-Organic Framework Structures with Built-In Chemically Active and Functional Elements (Review) 20242024, vol.53, no.8
Effect of Co–CoO Nanoparticles on the Charge Carriers Concentration in a Hybrid Structure Based on Single-Layer CVD Graphene 20242024, vol.53, no.8
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