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期刊


ISSN2053-1583
刊名2D Materials
参考译名二维材料
收藏年代2022～2026



全部

2022 2023 2024 2025 2026

2024, vol.11, no.1 2024, vol.11, no.2 2024, vol.11, no.3 2024, vol.11, no.4

题名作者出版年年卷期
Strain-induced topological transitions and tilted Dirac cones in kagome latticesM A Mojarro; Sergio E Ulloa20242024, vol.11, no.1
MXenes hierarchical architectures: electromagnetic absorbing, shielding and devicesQiang-qiang Wang; Wen-qiang Cao; Mao-sheng Cao20242024, vol.11, no.1
Enhancing pseudocapacitive intercalation in Ti_3C_2T_X MXene with molecular crowding electrolytesChaofan Chen; Albert de Kogel; Mark Weijers; Lars J Bannenberg; Xuehang Wang20242024, vol.11, no.1
Graphdiyne (C_nH_(2n-2))/NiWO_4 self-assembled p-n junction characterized with in situ XPS for efficient photocatalytic hydrogen productionLinqing Zhang; Minjun Lei; Zhiliang Jin20242024, vol.11, no.1
What governs the atomic structure of the interface between 2D transition metal dichalcogenides in lateral heterostructures?Francis H Davies; Kai Mehlich; Carsten Busse; Arkady V Krasheninnikov20242024, vol.11, no.1
Metal-metal bonding, electronic excitations, and strong resonance Raman effect in 2D layered α-MoCl_3Sandra Schiemenz; Samuel Froeschke; Marco Naumann; Marco Rosenkranz; Bernd Buchner; Andreas Koitzsch; Martin Knupfer; Silke Hampel; Stanislav M Avdoshenko; Alexey A Popov20242024, vol.11, no.1
Phonon-mediated magneto-resonances in biased graphene layersMrityunjay Pandey; Kenji Watanabe; Takashi Taniguchi; Srinivasan Raghavan; U Chandni20242024, vol.11, no.1
Controllable growth of wafer-scale two-dimensional WS2 with outstanding optoelectronic propertiesShiwei Zhang; Yulong Hao; Fenglin Gao; Xiongqing Wu; Shijie Hao; Mengchun Qiu; Xiaoming Zheng; Yuehua Wei; Guolin Hao20242024, vol.11, no.1
Enhanced vacuum ultraviolet photoemission from graphene nanoribbonsMartina Corso; Jorge Lobo-Checa; Andrew P Weber; Ignacio Piquero-Zulaica; Zakaria M Abd El-Fattah; Patrick Le Fevre; J Enrique Ortega; Eugene Krasovsldi20242024, vol.11, no.1
Power efficient MoS_2 synaptic devices based on Maxwell-Wagner interfacial charging in binary oxidesJingyi Zou; Sen Lin; Tianyi Huang; Hefei Liu; Yushuang Liu; Yibai Zhong; Yuxuan Cosmi Lin; Han Wang; Sheng Shen; Min Xu; Xu Zhang20242024, vol.11, no.1
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