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期刊


issn1063-7397
刊名Russian Microelectronics
中译刊名《俄罗斯微电子学》
简介俄罗斯期刊《微电子学》(736P0020)的英文翻译版。高价刊。
收藏年代2002-

全部

2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019


题名作者出版年年卷期
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS TechnologyA. B. Boruzdina; Yu. M. Gerasimov; N. G. Grigor'ev; A. V. Kobylyatskii; A. V. Ulanova; I. I. Shvetsov-Shilovskii20192019, vol.48, no.4
Microconsuming 8-12 GHz GaN Power AmplifiersS. A. Gamkrelidze; D. L. Gnatyuk; A. V. Zuev; M. V. Maitama; P. P. Mal'tsev; A. O. Mikhalev; Yu. V. Fedorov20192019, vol.48, no.4
Memristor Based Pulse Train GeneratorV. V. Rakitin; S. G. Rusakov20192019, vol.48, no.4
Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICsA. I. Chumakov; D. V. Bobrovsky; A. A. Pechenkin; D. V. Savchenkov; G. S. Sorokoumov; I. I. Shvetsov-Shilovskiy20192019, vol.48, no.4
Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into GroupsA. L. Stempkovskii; D. V. Tel'pukhov; T. D. Zhukova; A. I. Demeneva; V. V. Nadolenko; S. I. Gurov20192019, vol.48, no.4
The Effect of an N_2 Additive on the GaAs Etching Rate in CF_2Cl_2 PlasmaS. A. Pivovarenok20192019, vol.48, no.4
Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow DischargeYu. K. Ezhovskii; S. V. Mikhailovskii20192019, vol.48, no.4
Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD MethodA. V. Fadeeva; K. V. Rudenko20192019, vol.48, no.4
Estimating the Interrelation between the Rate of Atomic Layer Deposition of Thin Platinum-Group Metal Films and the Molecular Mass of Reactant PrecursorsV. Yu. Vasilyev20192019, vol.48, no.4
Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS_(l-x)Se_x MaterialsS. M. Asadov; S. N. Mustafaeva; V. F. Lukichev; D. T. Guseinov20192019, vol.48, no.4
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