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OA期刊


ISSN0013-5194
刊名Electronics letters
出版商Institution of Electrical Engineers
urlhppt://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=2220
机构Wiley



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2015, vol.51, no.1 2015, vol.51, no.10 2015, vol.51, no.11 2015, vol.51, no.12 2015, vol.51, no.13 2015, vol.51, no.14
2015, vol.51, no.15 2015, vol.51, no.16 2015, vol.51, no.17 2015, vol.51, no.18 2015, vol.51, no.19 2015, vol.51, no.2
2015, vol.51, no.20 2015, vol.51, no.21 2015, vol.51, no.22 2015, vol.51, no.23 2015, vol.51, no.24 2015, vol.51, no.25
2015, vol.51, no.3 2015, vol.51, no.4 2015, vol.51, no.5 2015, vol.51, no.6 2015, vol.51, no.7 2015, vol.51, no.8
2015, vol.51, no.9

题名作者出版年年卷期
Interferometric orbital angular momentum mode multiplexer/demultiplexer based on pairs of cylindrical lensesP. Martelli;P. Boffi;A. Fasiello;M. Martinelli;20152015, vol.51, no.3
Sample selective filter in HEVC intra-prediction for screen content video codingJe-Won Kang;20152015, vol.51, no.3
Synthesising frontal face image using elastic net penalty and neighbourhood consistency priorYuanhong Hao;Chun Qi;20152015, vol.51, no.3
Accelerating floating-point to fixed-point data type conversion with evolutionary algorithmsL.S. Rosa;C.F.M. Toledo;V. Bonato;20152015, vol.51, no.3
Analogue-to-information conversion using multi-comparator-based integrate-and-fire samplerFangqing Wen;Yu Tao;Gong Zhang;20152015, vol.51, no.3
Probability of complete decoding of random codes for short messagesZan Kai Chong;Bok-Min Goi;Hiroyuki Ohsaki;Bryan Ng;Hong Tat Ewe;20152015, vol.51, no.3
Unsupervised binary hashing method using locality preservation and quantisation error minimisationJin-Bum Kim;Rae-Hong Park;20152015, vol.51, no.3
Broadband substrate-integrated waveguide T-junction with arbitrary power-dividing ratioTeng Li;Wenbin Dou;20152015, vol.51, no.3
Wideband patch directional coupler based on non-uniform mushroom structureXin Yu Zhou;Shao Yong Zheng;Xing Yu Pu;Wing Shing Chan;Yunliang Long;20152015, vol.51, no.3
Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperatureZhuofa Chen;Dedong Han;Nannan Zhao;Yingying Cong;Jing Wu;Junchen Dong;Feilong Zhao;Lingling Huang;Yi Zhang;Guodong Cui;Lifeng Liu;Shengdong Zhang;Xing Zhang;Yi Wang;20152015, vol.51, no.3
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