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OA期刊


ISSN0353-3670
刊名Facta Universitatis. Series Electronics and Energetics
出版商Univerzitet u Nishu / University of Nis
urlhttp://factaee.elfak.ni.ac.rs/
机构Univerzitet u Nishu / University of Nis;Univerzitet u Nishu / University of Nis



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2016, vol.29, no.2 2016, vol.29, no.3 2016, vol.29, no.4

题名作者出版年年卷期
CONTRIBUTION TO CALCULATING THE IMPEDANCE OF GROUNDING ELECTRODES USING CIRCUIT EQUIVALENTSAndrijana KuharSs. Cyril and Methodius University, FEIT, Skopje, Macedonia,Leonid GrcevSs. Cyril and Methodius University, FEIT, Skopje, Macedonia20162016, vol.29, no.4
MANY-VALUED GALOIS SHANNON-DAVIO TREES AND THEIR COMPLEXITYAnas N. Al-RabadiPhiladelphia University, EE Dept. and, The University of Jordan, CPE Dept.20162016, vol.29, no.4
A NOVEL ANALYTICAL METHOD FOR THE SELECTIVE MULTIPLIERLESS LINEAR-PHASE 2D FIR FILTER FUNCTIONJelena R. Djordjevic-KozarovUniversity of Niš, Faculty of Electronic Engineering, Niš, Serbia,Vlastimir D. PavlovicUniversity of Niš, Faculty of Electronic Engineering, Niš, Serbia20162016, vol.29, no.4
NONRIGOROUS SYMMETRIC SECOND-ORDER ABC APPLIED TO LARGE-DOMAIN FINITE ELEMENT MODELING OF ELECTROMAGNETIC SCATTERERSSlobodan Vojka SavićUniversity of Belgrade, School of Electrical Engineering, Belgrade, Serbia,Milan Miodrag IlićColorado State University, Department of Electrical and Computer Engineering, Fort Collins, CO, USA20162016, vol.29, no.4
HIGH PERFORMANCE DIGITAL CURRENT CONTROL IN THREE PHASE ELECTRICAL DRIVESLjiljana S PericUniversity of Belgrade, Dept. of Electrical Engineering, Belgrade, Serbia,Slobodan N VukosavicUniversity of Belgrade, Dept. of Electrical Engineering, Belgrade, Serbia20162016, vol.29, no.4
TRANSIENT VOLTAGE SUPPRESSOR BASED ON DIODE-TRIGGERED LOW-VOLTAGE SILICON CONTROLLED RECTIFIERXiang LiInstitute of Photonics and MicroelectronicsDepartment of Information Sciences and Electronic Engineering, Zhejiang UniversityHangzhou, China,Shurong DongInstitute of Photonics and MicroelectronicsDepartment of Information Sciences and Electronic Engineering, Zhejiang UniversityHangzhou, China,Zhihui YuInstitute of Photonics and MicroelectronicsDepartment of Information Sciences and Electronic Engineering, Zhejiang UniversityHangzhou, China,Jie ZengInstitute of Photonics and MicroelectronicsDepartment of Information Sciences and Electronic Engineering, Zhejiang UniversityHangzhou, China,Weihuai WangInstitute of Photonics and MicroelectronicsDepartment of Information Sciences and Electronic Engineering, Zhejiang UniversityHangzhou, China20162016, vol.29, no.4
MICROELECTRONICS PACKAGING TECHNOLOGY ROADMAPS, ASSEMBLY RELIABILITY, AND PROGNOSTICSReza GhaffarianJet Propulsion Laboratory, California Institute of Technology Pasadena, California, USA20162016, vol.29, no.4
MULTI-CRITERIA ASSESMENT OF THE SMART GRID EFFICIENCY USING THE FUZZY ANALITICAL HYERARCHY PROCESSAleksandar JanjicUniversity of Niš, Faculty of Electronic Engineering, Niš, Serbia,Suzana SavicUniversity of Niš, Faculty of Occupational Safety, Niš, Serbia,Goran JanackovicUniversity of Niš, Faculty of Occupational Safety, Niš, Serbia,Miomir StankovicUniversity of Niš, Faculty of Occupational Safety, Niš, Serbia,Lazar Zoran VelimirovicMathematical Institute of the Serbian Academy of Sciences and Arts, Belgrade, Serbia20162016, vol.29, no.4
ELECTROMAGNETIC PULSE EFFECTS AND DAMAGE MECHANISM ON THE SEMICONDUCTOR ELECTRONICSVladimir Vasilevich ShurenkovMicroelectronic Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation,Vyacheslav Sergeevich PershenkovMicroelectronic Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation20162016, vol.29, no.4
ADVANCED SAMPLE IONIZATION METHOD IN ION MOBILITY SPECTROMETERVladimir Vasilievich BelyakovMicroelectronic Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation,Maksim Aleksandrovich MatuskoMicroelectronic Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation,Anatoly Vladimirovich GolovinMicroelectronic Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation,Evgeniy Anatolovich GromovMicroelectronic Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, Russian Federation20162016, vol.29, no.4
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