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OA期刊


刊名npj 2D Materials and Applications
出版商Nature Publishing Group
urlhttps://www.nature.com/npj2dmaterials/
机构Nature Publishing Group



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2017, vol.1, no.1

题名作者出版年年卷期
Contact morphology and revisited photocurrent dynamics in monolayer MoS 2Eric ParzingerWalter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany ;Nanosystems Initiative Munich (NIM),Schellingstr. 4, 80799 Munich, Germany,Martin HetzlWalter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany ;Nanosystems Initiative Munich (NIM),Schellingstr. 4, 80799 Munich, Germany,Ursula WurstbauerWalter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany ;Nanosystems Initiative Munich (NIM),Schellingstr. 4, 80799 Munich, Germany,Alexander W. HolleitnerWalter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4a, 85748 Garching, Germany ;Nanosystems Initiative Munich (NIM),Schellingstr. 4, 80799 Munich, Germany20172017, vol.1, no.1
Hypochlorite degrades 2D graphene oxide sheets faster than 1D oxidised carbon nanotubes and nanohornsLeon NewmanNanomedicine Laboratory, Faculty of Biology, Medicine and Health and National Graphene Institute, University of Manchester, AV Hill Building, Manchester M13 9PT, UnitedKingdom,Neus LozanoNanomedicine Laboratory, Faculty of Biology, Medicine and Health and National Graphene Institute, University of Manchester, AV Hill Building, Manchester M13 9PT, UnitedKingdom,Minfang ZhangInstitute of Advanced Science and Industrial Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan,Sumio IijimaInstitute of Advanced Science and Industrial Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan,Masako YudasakaInstitute of Advanced Science and Industrial Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan,Cyrill BussyNanomedicine Laboratory, Faculty of Biology, Medicine and Health and National Graphene Institute, University of Manchester, AV Hill Building, Manchester M13 9PT, UnitedKingdom,Kostas KostarelosNanomedicine Laboratory, Faculty of Biology, Medicine and Health and National Graphene Institute, University of Manchester, AV Hill Building, Manchester M13 9PT, UnitedKingdom20172017, vol.1, no.1
Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gatingXudong WangNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;School ofMaterials Science and Engineering, Xiangtan University, 411105 Xiangtan, Hunan, China,Yan ChenNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Guangjian WuNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China,Dan LiNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China,Luqi TuNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Shuo SunNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Hong ShenNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Tie LinNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Yongguang XiaoSchool ofMaterials Science and Engineering, Xiangtan University, 411105 Xiangtan, Hunan, China,Minghua TangSchool ofMaterials Science and Engineering, Xiangtan University, 411105 Xiangtan, Hunan, China,Weida HuNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Lei LiaoHunan University, School of Physics and Micro Electronics, 410082 Changsha, China,Peng ZhouDepartment of Microelectronics, State Key Laboratory of ASIC and System,Fudan University, 200433 Shanghai, China,Jinglan SunNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Xiangjian MengNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Junhao ChuNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China,Jianlu WangNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, No.500 Yutian Road, 200083 Shanghai, China;University of Chinese Academy of Sciences, No.19A Yuquan Road, 100049 Beijing,China20172017, vol.1, no.1
3D integrated monolayer graphene–Si CMOS RF gas sensor platformSeyedeh Maryam Mortazavi ZanjaniDepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin TX 78758, USA,Milo HoltDepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin TX 78758, USA,Mir Mohammad SadeghiDepartment of MechanicalEngineering, The University of Texas at Austin, Austin, TX 78712, USA,Somayyeh RahimiDepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin TX 78758, USA,Deji AkinwandeDepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin TX 78758, USA20172017, vol.1, no.1
Author correction: Wafer-scale two-dimensional ferromagnetic Fe 3 GeTe 2 thin films grown by molecular beam epitaxyShanshan LiuState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Xiang YuanState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Yichao ZouMaterials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia,Yu ShengSKLSM, Institute of Semiconductors, ChineseAcademy of Sciences, Beijing 100083, China,Ce HuangState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Enze ZhangState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Jiwei LingState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Yanwen LiuState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Weiyi WangState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Cheng ZhangState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China,Jin ZouMaterials Engineering, The University of Queensland, Brisbane, QLD 4072, Australia;Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD 4072, Australia,Kaiyou WangSKLSM, Institute of Semiconductors, ChineseAcademy of Sciences, Beijing 100083, China,Faxian XiuState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;Institute for Nanoelectronic Devices and Quantum Computing,Fudan University, 200433 Shanghai, China;CollaborativeInnovation Center of Advanced Microstructures, Nanjing 210093, China20172017, vol.1, no.1
Graphene-based nanolaminates as ultra-high permeation barriersAbhay A. SagadeRalph E. Martin Department of Chemical Engineering, University of Arkansas, Fayetteville, AR 72701, USA,Adrianus I. AriaChair of Applied Physical Chemistry, Ruprecht-Karls UniversityHeidelberg, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany,Steven EdgeChair of Applied Physical Chemistry, Ruprecht-Karls UniversityHeidelberg, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany,Paolo MelgariMicroElectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA,Bjoern GiesekingInstitute forNanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA,Bernhard C. BayerSchool of Chemistry and CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2,Ireland,Jannik C. MeyerRalph E. Martin Department of Chemical Engineering, University of Arkansas, Fayetteville, AR 72701, USA;MicroElectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA;Institute forNanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA,David BirdSchool of Physics and CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland,Paul BrewerKirchhoff-Institute for Physics and Centre for Advanced Materials,Ruprecht-Karls University Heidelberg, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany,Stephan HofmannChair of Applied Physical Chemistry, Ruprecht-Karls UniversityHeidelberg, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany20172017, vol.1, no.1
Reversible hysteresis inversion in MoS 2 field effect transistorsNaveen KaushikDepartment of Electrical Engineering, IIT Bombay, Mumbai 400076, India,David M. A. MackenzieCentre for Nanostructured Graphene (CNG), Department of Micro- and Nanotechnology, TechnicalUniversity of Denmark, 2800 Kongens Lyngby, Denmark,Kartikey ThakarDepartment of Electrical Engineering, IIT Bombay, Mumbai 400076, India,Natasha GoyalDepartment of Electrical Engineering, IIT Bombay, Mumbai 400076, India,Bablu MukherjeeDepartment of Electrical Engineering, IIT Bombay, Mumbai 400076, India,Peter BoggildCentre for Nanostructured Graphene (CNG), Department of Micro- and Nanotechnology, TechnicalUniversity of Denmark, 2800 Kongens Lyngby, Denmark,Dirch Hjorth PetersenCentre for Nanostructured Graphene (CNG), Department of Micro- and Nanotechnology, TechnicalUniversity of Denmark, 2800 Kongens Lyngby, Denmark,Saurabh LodhaDepartment of Electrical Engineering, IIT Bombay, Mumbai 400076, India20172017, vol.1, no.1
Phonon-assisted oscillatory exciton dynamics in monolayer MoSe 2Colin M. ChowDepartment of Physics, University of Washington, Seattle, WA 98195, USA,Hongyi YuDepartment of Physics and Center of Theoretical and Computational Physics, University of HongKong, Hong Kong, China,Aaron M. JonesDepartment of Physics, University of Washington, Seattle, WA 98195, USA,John R. SchaibleyDepartment of Physics, University of Arizona, Tuscon, AR 85721, USA,Michael KoehlerDepartment of Materials Science and Engineering, University of Tennessee,Knoxville, TN 37996, USA,David G. MandrusDepartment of Materials Science and Engineering, University of Tennessee,Knoxville, TN 37996, USA;Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA,R. MerlinCenter for Photonics and MultiscaleNanomaterials and Department of Physics, University of Michigan, Ann Arbor, MI 48109, USA,Wang YaoDepartment of Physics and Center of Theoretical and Computational Physics, University of HongKong, Hong Kong, China,Xiaodong XuDepartment of Physics, University of Washington, Seattle, WA 98195, USA;Department of Materials Science and Engineering, University of Washington,Seattle, WA 98195, USA20172017, vol.1, no.1
Erratum: Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivityLi TaoDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR, China,Zefeng ChenDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR, China,Xinming LiDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR, China,Keyou YanDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR, China,Jian-Bin XuDepartment of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT, Hong Kong SAR, China20172017, vol.1, no.1
Erratum: Mechanics of thermally fluctuating membranesJ. H. LosRadboud University, Institute for Molecules and Materials, Heyendaalseweg 135, Nijmegen, AJ 6525, The Netherlands,A. FasolinoRadboud University, Institute for Molecules and Materials, Heyendaalseweg 135, Nijmegen, AJ 6525, The Netherlands,M. I. KatsnelsonRadboud University, Institute for Molecules and Materials, Heyendaalseweg 135, Nijmegen, AJ 6525, The Netherlands20172017, vol.1, no.1
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