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OA期刊

刊名	npj 2D Materials and Applications
出版商	Nature Publishing Group
url	https://www.nature.com/npj2dmaterials/
机构	Nature Publishing Group

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2017	2018	2019	2020	2021	2022
2023	2024	2025

2020, vol.4, no.1

题名

作者

出版年

年卷期

Application of Raman spectroscopy to probe fundamental properties of two-dimensional materials

Xin Cong;Xue-Lu Liu;Miao-Ling Lin;Ping-Heng Tan;

2020

2020, vol.4, no.1

A swift technique to hydrophobize graphene and increase its mechanical stability and charge carrier density

Lukas Madauß;Erik Pollmann;Tobias Foller;Jens Schumacher;Ulrich Hagemann;Tobias Heckhoff;Matthias Herder;Lucia Skopinski;Lars Breuer;Anke Hierzenberger;Alexandra Wittmar;Henning Lebius;Abdenacer Benyagoub;Mathias Ulbricht;Rakesh Joshi;Marika Schleberger;

2020

2020, vol.4, no.1

Liquid exfoliation of electronic grade ultrathin tin(II) sulfide (SnS) with intriguing optical response

Abdus Salam Sarkar;Aamir Mushtaq;Dushyant Kushavah;Suman Kalyan Pal;

2020

2020, vol.4, no.1

Identifying defect-related quantum emitters in monolayer WSe 2

Jianchen Dang;Sibai Sun;Xin Xie;Yang Yu;Kai Peng;Chenjiang Qian;Shiyao Wu;Feilong Song;Jingnan Yang;Shan Xiao;Longlong Yang;Yunuan Wang;M. A. Rafiq;Can Wang;Xiulai Xu;

2020

2020, vol.4, no.1

Deep-learning-based image segmentation integrated with optical microscopy for automatically searching for two-dimensional materials

Satoru Masubuchi;Eisuke Watanabe;Yuta Seo;Shota Okazaki;Takao Sasagawa;Kenji Watanabe;Takashi Taniguchi;Tomoki Machida;

2020

2020, vol.4, no.1

Electrical transport properties in group-V elemental ultrathin 2D layers

Zehan Wu;Jianhua Hao;

2020

2020, vol.4, no.1

Tellurium as a successor of silicon for extremely scaled nanowires a first-principles study

Aaron Kramer;Maarten L. Van de Put;Christopher L. Hinkle;William G. Vandenberghe;

2020

2020, vol.4, no.1

Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS 2

E. Martino;A. Pisoni;L. Ćirić;A. Arakcheeva;H. Berger;A. Akrap;C. Putzke;P. J. W. Moll;I. Batistić;E. Tutiš;L. Forró;K. Semeniuk;

2020

2020, vol.4, no.1

Discrete interactions between a few interlayer excitons trapped at a MoSe 2 -WSe 2 heterointerface

Malte Kremser;Mauro Brotons-Gisbert;Johannes Knörzer;Janine Gückelhorn;Moritz Meyer;Matteo Barbone;Andreas V. Stier;Brian D. Gerardot;Kai Müller;Jonathan J. Finley;

2020

2020, vol.4, no.1

WSe 2 /SnSe 2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe 2 flake

Nicolò Oliva;Jonathan Backman;Luca Capua;Matteo Cavalieri;Mathieu Luisier;Adrian M. Ionescu;

2020

2020, vol.4, no.1