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OA期刊


ISSN1672-6030
刊名Nanotechnology and Precision Engineering
出版商Elsevier
urlhttps://www.sciencedirect.com/journal/nanotechnology-and-precision-engineering
机构ScienceDirect



全部

2018 2019 2020

2020, vol.3, no.1 2020, vol.3, no.2 2020, vol.3, no.3 2020, vol.3, no.4

题名作者出版年年卷期
Surface defects in 4H-SiC homoepitaxial layersLixia Zhao;20202020, vol.3, no.4
Density functional theory calculation of the properties of carbon vacancy defects in silicon carbideXiuhong Wang;Junlei Zhao;Zongwei Xu;Flyura Djurabekova;Mathias Rommel;Ying Song;Fengzhou Fang;20202020, vol.3, no.4
Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setupShen Diao;Jun Sun;Ziwei Zhou;Zhenzhong Zhang;Adolf Schöner;Zedong Zheng;Weiwei He;20202020, vol.3, no.4
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS GatesYongle Qi;Denggui Wang;Jianjun Zhou;Kai Zhang;Yuechan Kong;Suzhen Wu;Tangsheng Chen;20202020, vol.3, no.4
Investigation of material removal characteristics of Si (100) wafer during linear field atmospheric-pressure plasma etchingWeijia Guo;Senthil Kumar A.;Peng Xu;20202020, vol.3, no.4
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laserJiayu Liu;Zongwei Xu;Ying Song;Hong Wang;Bing Dong;Shaobei Li;Jia Ren;Qiang Li;Mathias Rommel;Xinhua Gu;Bowen Liu;Minglie Hu;Fengzhou Fang;20202020, vol.3, no.4



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