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会议名36th International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2022)
中译名《第三十六届国际复合半导体制造技术会议》
机构CS MANTECH, Inc.
会议日期9-12 May 2022
会议地点Monterey, California, USA
出版年2022
馆藏号343953


题名作者出版年
The New Normal: The Semiconductor Access Singularity and What It Means to YouJuan Cordovez2022
Heterogeneous Heterostructures: A Path to Next Generation High Performance Compound Semiconductor DevicesThomas E Kazior; Gregory M. Jones; Sharon M. Woodruff2022
The Importance of Zero Trust in MicroelectronicsLisa J. Porter2022
Thrilling Compound Semiconductor business opportunities in ChinaP. Chiu; E. Dogmus; T. Ayari; C. Troadec2022
Two-Inch High Quality Diamond Heteroepitaxial Growth on Sapphire for Power DevicesSeong-Woo Kim; Makoto Kasu2022
Epitaxy equipment towards a billion-dollar markV. Kumaresan; E. Jolivet2022
Advanced MOCVD Technology for RF-HEMT Growth on SEMI-Standard Large-Area (111) Silicon SubstratesC. Mauder; H. Hahn; Z. Gao; M. Marx; T. Zweipfennig; J. Ehrler; H. Kalisch; A. Vescan; J. Bolten; M. Lemme; A. Alian; R. Rodriguez; B. Parvais; M. Zhao; M. Heuken2022
Advances in Homoepitaxial GaN grown by MOCVD for Vertical Electronic DevicesF. Kaess; O. Laboutin; H. Marchand; C. -K. Kao; W. Johnson2022
Compound Semiconductor's Role in 5GJames Eastham; Ben Thomas2022
Rising mm-Wave Era for Sensing/Networking with Multi-Facet System/Technology ChallengesMau-Chung Frank Chang2022
3.4 - 3.8 GHz 20W Compact 2-stage GaN HEMT Power Amplifier using IPDs on HPSI SiC substratesSangmin Lee; Jinman Jin; Inseop Kim; Byoungchul Jun; Chulsoon Choi; Seokgyu Choi; Min Han; Hogeun Lee; Myoungkeun Song; Jihun Kwon; Myungsoo Park2022
100-V GaN HEMT Technology with Record-High Efficiency at C-Band FrequenciesSebastian Krause; Peter Bruckner; Rudiger Quay2022
Productive4.0 Holistic Innovations to Open the Potentials of Digital IndustryThomas Gutt; Hans Ehm; Germar Schneider; George Dimitrakopoulos2022
Machine Learning-Based Methods For In-Time Monitoring Equipment ConditionsWei-You Chen; Min-Chun Chuang; Yu-Min Hsu; Chi-Hsiang Kuo; Cheng-Kuo Lin2022
Transfer of the AFRL 0.14μm AlGaN/GaN-on-SiC MMIC Process to MACOM's Commercial FabG. Cueva; E. Werner; A. Green; K. Liddy; A. Islam; N. Miller; A. Crespo; N. Sepelak; D. Walker; G. Hughes; R. Fitch; K. Chabak2022
Improving manufacturability of highly scaled RF GaN HEMTsGeorges Siddiqi; Andrea Corrion; David Fanning; Michael Johnson; Dan Denninghoff; Joseph Nedy; Hannah Robinson; Erdem Arkun; Haidang Tran; Quang Lam; Luis Fortin; Florian Herrault2022
Electrical characteristics of Wavice GaN HEMT on 4" SiC with 0.2 μm gate process for X- and Ku-band applicationsJunhyeok Lee; Min Han; Kyeongjae Lee; Byoungchul Jun; Seokgyu Choi; Jihun Kwon; Hankyul Ji; Chulsoon Choi; Hogeun Lee; Sangmin Lee2022
III-V Semiconductor Devices on 6-inch wafer for sub-Terahertz CommunicationsJung-Tao Chung; Cheng-Kuo Lin; Lung-Yi Tseng; Chia-Ming Chang; Yu-An Liao; Jung-Hao Hsu; Hsi-Tsung Lin; Shu-Hsiao Tsai2022
GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam EpitaxyBarry Wu; Martin Dvorak; Forest Huang; Scott LaFrancois; Mathias Bonse; Evan Lobisser; Masaya Iwamoto; Ben Zaks2022
Normally-off Millimeter-Wave InAlN/GaN HEMTs Fabricated by Atomic Layer Etching Gate RecessSiyu Liu; Xiaohua Ma; Jiejie Zhu; Minhan Mi; Jingshu Guo; Yue Hao2022
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