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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2003, vol.32, no.1 2003, vol.32, no.2 2003, vol.32, no.3 2003, vol.32, no.4 2003, vol.32, no.5 2003, vol.32, no.6

题名作者出版年年卷期
In{sub}Ga{sub}(1-x) as strained-layer quantum well in a pseudomorphic heterostructure: high-resolution XRD characterization for different quantum-well thicknessesA. M. Afanas'ev; R. M. Imamov; A. A. Lomov; V. G. Mokerov; M. A. Chuev; Yu. V. Fedorov; Yu. V. Khabarov20032003, vol.32, no.2
High-permittivity-insulator EEPROM cell using Al{sub}2O{sub}3 or ZrO{sub}2V. A. Gritsenko; K. A. Nasyrov; Yu. N. Novikov; A. L. Aseev20032003, vol.32, no.2
Planar power MOSFETs for smart power CMOS switchesM. A. Korolev; R. D. Tikhonov20032003, vol.32, no.2
Current-voltage characteristics of two-electrode elements with carbon nanotubesI. I. Bobrinetskii; V. K. Nevolin; V. I. Petrik; Yu. A. Chaplygin20032003, vol.32, no.2
Impulse-current generation by the bispin: factors determining the peak currentA. P. Lysenko20032003, vol.32, no.2
Electrochemical etching of a niobium film through a thin nanomask formed by AFM tip-induced local oxidationA. N. Red'kin; L. V. Malyarevich; I. V. Malikov; G. M. Mikhailov20032003, vol.32, no.2
Surface-photovoltage measurement of volume electron lifetime in p-Si wafersV. A. Skidanov; M. S. Baev; N. A. Baikova20032003, vol.32, no.2
Temperature dependence of carrier generation at the silicon-lead-borosilicate-glass interfaceS. I. Vlasov; P. B. Parchinskii; L. G. Ligai20032003, vol.32, no.2
NANODEV: a nanoelectronic-device simulation software systemI. I. Abramov; I. A. Goncharenko; S. A. Ignatenko; A. V. Korolev; E. G. Novik; A. I. Rogachev20032003, vol.32, no.2
Prediction of local and global ionization effects on ICs: the synergy between numerical and physical simulationV. V. Belyakov; A. I. Chumakov; A. Y. Nikiforov; V. S. Pershenkov; P. K. Skorobogatov; A. V. Sogoyan20032003, vol.32, no.2
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