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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2003, vol.32, no.1 2003, vol.32, no.2 2003, vol.32, no.3 2003, vol.32, no.4 2003, vol.32, no.5 2003, vol.32, no.6

题名作者出版年年卷期
SOI-MOSFET threshold-voltage characteristicsS. M. Zakharov20032003, vol.32, no.1
Self-aligned technology applied to planar power MOSFETsM. A. Korolev; A. V. Shvets; R. D. Tikhonov20032003, vol.32, no.1
MBE-grown GaAs films on GaAs(111)A substrates misoriented toward [211]G. B. Galiev20032003, vol.32, no.1
Modeling molecular-ion implantation into solidsA. V. Chernyaev20032003, vol.32, no.1
Methods for the prediction of total-dose effects on modern integrated semiconductor devices in space: a reviewV. V. Belyakov; V. S. Pershenkov; G. I. Zebrev; A. V. Sogoyan; A. I. Chumakov; A. Y. Nikiforov; P. K. Skorobogatov20032003, vol.32, no.1
Statistical simulation for process design and optimization in IC manufactureA. A. Kouleshoff; V. S. Malyshev; V. V. Nelayev; V. R. Stempitsky20032003, vol.32, no.1
Statistical yield modeling for IC manufacture: hierarchical fault distributionsYu. I. Bogdanov; N. A. Bogdanova; V. L. Dshkhunyan20032003, vol.32, no.1



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