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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2004, vol.33, no.1 2004, vol.33, no.2 2004, vol.33, no.3 2004, vol.33, no.4 2004, vol.33, no.5 2004, vol.33, no.6

题名作者出版年年卷期
Mathematical Modeling of Ionizing-Radiation Effects in ICs: A ReviewT. M. Agakhanyan20042004, vol.33, no.2
Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear ModelA. Y. Nikiforov; P. K. Skorobogatov20042004, vol.33, no.2
Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI CircuitsA. Y. Nikiforov; A. V. Sogoyan20042004, vol.33, no.2
One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event UpsetsA. I. Chumakov20042004, vol.33, no.2
Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse ShapeA. I. Chumakov; V. V. Gontar20042004, vol.33, no.2
Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event EffectsA. I. Chumakov; A. N. Egorov; O. B. Mavritsky; A. V. Yanenko20042004, vol.33, no.2
Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray ResultsD. V. Gromov; V. V. Elesin; S. A. Polevich; Yu. F. Adamov; V. G. Mokerov20042004, vol.33, no.2
Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETsS. V. Obolenskii20042004, vol.33, no.2
Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFETS. V. Obolenskii20042004, vol.33, no.2



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