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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2006, vol.35, no.1 2006, vol.35, no.2 2006, vol.35, no.4 2006, vol.35, no.5 2006, vol.35, no.6

题名作者出版年年卷期
Electrical Behavior of Modulation- and Delta-DopedG. B. Galiev; I. S. Vasil'evskii; E. A. Klimov; V. G. Mokerov20062006, vol.35, no.2
Cold Atoms in Optical Lattices as Qubits for a Quantum ComputerD. B. Tretyakov; I. I. Beterov; V. M. Entin; I. I. Ryabtsev20062006, vol.35, no.2
Electroluminescence Mechanisms in SiO{sub}xN{sub}y(Si) Nanocomposite FilmsV. G. Baru; V. A. Zhitov; L. Yu. Zakharov; A. N. Izotov; V. I. Pokalyakin; G. V. Stepanov; O. F. Shevchenko; E. A. Shteinman20062006, vol.35, no.2
Progression of an Excess-Carrier Pulse in Zn-Compensated P-Doped Si Exposed to an Electric Field Close to the Recombination-Wave ThresholdB. V. Kornilov; V. V. Privezentsev20062006, vol.35, no.2
Influence of Background Impurities on the Formation of Stacking Faults in Silicon WafersD. I. Brinkevich; V. S. Prosolovich; S. A. Vabishchevich; A. N. Petlitskii20062006, vol.35, no.2
Multiplex Fourier-Transform Spectroscopy in the Characterization of Stochastic Inhomogeneous Film Growth: A Conceptual FrameworkV. A. Kotenev20062006, vol.35, no.2
Reading Sensitivity of a New Thermomechanical Data-Storage Technique: The Effect of Reducing Probe DimensionsA. B. Petrin20062006, vol.35, no.2
Inclusion-Exclusion Principle in the Design of a BIST Unit for LSI and VLSI CircuitsI. P. Kobyak20062006, vol.35, no.2
Transient Analysis of RC On-Chip Transmission Lines with Respect to Propagation SpeedV. B. Fyodorov20062006, vol.35, no.2



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