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2012, vol.41, no.1	2012, vol.41, no.2	2012, vol.41, no.3	2012, vol.41, no.4	2012, vol.41, no.5	2012, vol.41, no.7
2012, vol.41, no.8

题名	作者	出版年	年卷期
Single-Event-Effect Sensetivity Characterization of LSI Circuits with a Laser-Based and a Pulsed Gamma-Ray Testing Facilities Used in Combination	A. I. Chumakov; A. L. Vasil'ev; A. A. Pechenkin; D. V. Savchenkov; A. S. Tararaksin; A. V. Yanenko	2012	2012, vol.41, no.4
An Estimate of the FPGA Sensitivity to Effects of Single Nuclear Particles	D. V. Bobrovskii; O. A. Kalashnikov; P. V. Nekrasov	2012	2012, vol.41, no.4
Simulation of the Local Effect of Nuclear Particles on 65-nm CMOS DICE Memory Cells	V. Ya. Stenin; P. V. Stepanov	2012	2012, vol.41, no.4
Simulation of the Local Effect of Nuclear Particles on 65-nm CMOS Elements of Two-Phase Logics	Yu. V. Katunin; V. Ya. Stenin	2012	2012, vol.41, no.4
An Analysis of the Radiation Behavior of Pulse Voltage Stabilizers	L. N. Kessarinskiy; D. V. Boychenko; A. Y. Nikiforov	2012	2012, vol.41, no.4
Radiation-Induced Degradation in the Dynamic Parameters of Memory Chips	A. B. Boruzdina; A. V. Ulanova; N. G. Grigor'ev; A. Yu. Nikiforov	2012	2012, vol.41, no.4
Investigation of the Possibility to Develop Radiation-Hardness LSIs for Navigational Purposes According to the 0.35-μm Domestic CMOS SOI Technology	V. V. Elesin; G. N. Nazarova; G. V. Chukov; Yu. A. Kabal'nov; A. A. Titarenko	2012	2012, vol.41, no.4
Electron Transport in Thin-Base Transistor Structures Exposed to High-Energy Photons	A. S. Puzanov; S. V. Obolensky	2012	2012, vol.41, no.4