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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2020, vol.49, no.1 2020, vol.49, no.2 2020, vol.49, no.3 2020, vol.49, no.4 2020, vol.49, no.5 2020, vol.49, no.6
2020, vol.49, no.7 2020, vol.49, no.8

题名作者出版年年卷期
Spectrophotometric Monitoring of Chloride Electrolyte for the Electrochemical Deposition of PermalloyR. D. Tikhonov; S. A. Polomoshnov; D. V. Kostuk20202020, vol.49, no.7
Thermal Activation of Getters in Magnetron Production TechnologyA. A. Polunina; V. S. Petrov; I. F. Khanbekov; I. P. Li; A. I. Gaidar; D. N. Loktev20202020, vol.49, no.7
Determination of the Operating Time to Failure of a Sub-100-nm MOS Transistor Gate Dielectric Using Accelerated TestsA. S. Sivchenko; E. V. Kuznetsov; A. N. Saurov20202020, vol.49, no.7
Thermal Stabilization of the Geometric Parameters of an Array of Silver Nanoparticles Obtained by Vacuum-Thermal Evaporation on an Unheated SubstrateD. G. Gromov; S. V. Dubkov; G. S. Eritsyan; A. I. Savitsky; V. A. Bykov; Yu. A. Bobrov20202020, vol.49, no.7
Thermomechanical Strength of Element Connections in Microelectronic ModulesA. I. Pogalov; A. Yu. Titov; S. P. Timoshenkov20202020, vol.49, no.7
Determining the Junction-to-Case Thermal Resistance of a Semiconductor Device from Its Cooling CurveN. L. Evdokimova; V. V. Dolgov; K. A. Ivanov20202020, vol.49, no.7
The Special Features of Simulation of the Current-Voltage Characteristics of JFETs in the Cryogenic Temperature RangeK. O. Petrosyants; M. R. Ismail-Zade; L. M. Sambursky20202020, vol.49, no.7
Charge Properties of the MOS Transistor Structure with the Channel Made from a Two-Dimensional CrystalT. I. Makovskaya; A. L. Danilyuk; A. V. Krivosheeva; V. L. Shaposhnikov; V. E. Borisenko20202020, vol.49, no.7
Active Processor Hardware StackA. A. Semenov; D. A. Usanov; A. S. Dronkin20202020, vol.49, no.7
Study of SOI Field-Effect Hall Sensors in the Partial Depletion ModeM. A. Korolev; V. N. Mordkovich; A. V. Leonov; S. S. Devlikanova20202020, vol.49, no.7
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