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2022, vol.51, no.1	2022, vol.51, no.2	2022, vol.51, no.3	2022, vol.51, no.4	2022, vol.51, no.5	2022, vol.51, no.6
2022, vol.51, no.7	2022, vol.51, no.8

题名	作者	出版年	年卷期
Finite Element Modeling of Surface Acoustic Wave Devices Using COMSOL	Koigerov A. S.; Korlyakov A. V.	2022	2022, vol.51, no.4
Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon	Murin D. B.; Pivovarenok S. A.; Kozin A. S.	2022	2022, vol.51, no.4
Plasma Parameters and Kinetics of Reactive-Ion Etching of Silicon in a C6F12O + Ar Mixture	Efremov A. M.; Betelin V. B.; Kwon K.-H.	2022	2022, vol.51, no.4
A Mechanism for the Formation of a Conducting Medium in Memristers Based on Electroformed Open Sandwich MDM Structures	Mordvintsev V. M.; Gorlachev E. S.; Kudryavtsev S. E.	2022	2022, vol.51, no.4
Application of the Methods Used to Interpret the Electron Spectroscopy Spectra to Interpret Ion Spectroscopy Signals	Afanasiev V. P.; Lobanova L. G.	2022	2022, vol.51, no.4
Modeling Silicon Cylindrical CMOS Nanotransistors with a Fully Enclosed Variable-Radius Gate	Masalsky N. V.	2022	2022, vol.51, no.4
Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics	Gaidukasov R. A.; Myakon’kikh A. V.; Rudenko K. V.	2022	2022, vol.51, no.4
Formation of Nanosized Structures on the Silicon Surface by a Combination of Focused Ion Beam Methods and Plasma-Chemical Etching	Klimin V. S.; Morozova Yu. V.; Kots I. N.; Vakulov Z. E.; Ageev O. A.	2022	2022, vol.51, no.4
Analysis of the Effects Influencing the Retention Time of Filament-Based Memristors	Rudenko K. V.; Fadeev A. V.	2022	2022, vol.51, no.4