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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2008, vol.37, no.1 2008, vol.37, no.2 2008, vol.37, no.3 2008, vol.37, no.4 2008, vol.37, no.5 2008, vol.37, no.6

题名作者出版年年卷期
Evaluating the Effect of Photogeneration Nonuniformity on the Accuracy of Laser Simulation of the Transient Radiation Response in Semiconductor Devices and CircuitsA. Y. Nikiforov; P. K. Skorobogatov20082008, vol.37, no.1
Simulating Single-Event Effects Associated with High-Energy Neutrons for Different VLSI TechnologiesS. V. Baranov; B. V. Vaselegin; P. N. Osipenko; A. I. Chumakov; A. V. Yanenko20082008, vol.37, no.1
Simulating the Response of SOS CMOS Building Blocks to Pulsed Ionizing IrradiationA. V. Kirgizova; P. K. Skorobogatov; A. Y. Nikiforov; L. N. Kessarinskii; G. G. Davydov; A. G. Petrov20082008, vol.37, no.1
Evaluating the Effect of Temperature on the Accuracy of Laser Simulation of the Transient Radiation Response in Semiconductor Devices and CircuitsA. Y. Nikiforov; P. K. Skorobogatov20082008, vol.37, no.1
Current-Feedback Operational Amplifier: Some Features of Its Transient Radiation ResponseT. M. Agakhanyan20082008, vol.37, no.1
Method for Online Nondestructive Hardness Assurance for CMOS LSI Circuits Realized in SOS TechnologyG. G. Davydov; A. V. Sogoyan; A. Y. Nikiforov; A. V. Kirgizova; A. G. Petrov; A. Y. Sedakov; I. B. Yashanin20082008, vol.37, no.1
Estimating IC Susceptibility to Single-Event LatchupA. I. Chumakov; A. A. Pechenkin; A. N. Egorov; O. B. Mavritsky; S. V. Baranov; A. L. Vasil'ev; A. V. Yanenko20082008, vol.37, no.1



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