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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2010, vol.39, no.1 2010, vol.39, no.2 2010, vol.39, no.3 2010, vol.39, no.4 2010, vol.39, no.5 2010, vol.39, no.6

题名作者出版年年卷期
Single-Event-Effect Prediction for ICs in a Space EnvironmentA. I. Chumakov; A. L. Vasil'ev; A. A. Kozlov; D. O. Kol'tsov; A. V. Krinitskii; A. A. Pechenkin; A. S. Tararaksin; A. V. Yanenko20102010, vol.39, no.2
Features of Design of Submicron CMOS of Static RAMs with an Increased Failure Resistance to the Effect of High-Energy ParticlesV. Ya. Stenin; I. G. Cherkasov20102010, vol.39, no.2
Conversion Model of Enhanced Low-Dose-Rate Sensitivity for Bipolar ICsV. S. Pershenkov; D. V. Savchenkov; A. S. Bakerenkov; V. N. Ulimov20102010, vol.39, no.2
Methods of Construction of the Criterial Membership Function for the Prediction of Functional Failures of Large-Scale Integrated Circuits under the Effect of Radiative and Electromagnetic RadiationsV. M. Barbashov20102010, vol.39, no.2
Radiation-Induced Breakdown of a Nonuniformly Doped PN JunctionA. S. Puzanov; S. V. Obolensky20102010, vol.39, no.2
The Effect of Ionizing Radiation on the Characteristics of Silicon-Germanium Microwave Integrated CircuitsV. V. Elesin; G. V. Chukov; D. V. Gromov; V. V. Repin; V. A. Vavilov20102010, vol.39, no.2
Design of Passive Elements for Monolithic Silicon-Germanium Microwave ICs Tolerant to Ionizing RadiationV. V. Elesin; G. N. Nazarova; N. A. Usachev20102010, vol.39, no.2



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