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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2010, vol.39, no.1 2010, vol.39, no.2 2010, vol.39, no.3 2010, vol.39, no.4 2010, vol.39, no.5 2010, vol.39, no.6

题名作者出版年年卷期
Nondestructive Contactless Electron-Beam Diagnostics of Microelectronic Device StructuresA. F. Aleksandrov; S. A. Ditsman; F. A. Luk'yanov; N. A. Orlikovsku; E. I. Rau; R. A. Sennov20102010, vol.39, no.5
Influence of the Pressure of the Gas Medium and Duration of Controlling Pulses on the Stability of Characteristics of Memory Cells Based on Electroformed Si - SiO_2 - W StructuresV. M. Mordvintsev; S. E. Kudryavtsev; V. L. Levin; L. A. Tsvetkova20102010, vol.39, no.5
A Generalized Theory of Charge Transport in Low-Barrier Mott Diodes with Near-Surface 5-Doping: Comparison with Experimental DataV. I. Shashkin; A. V. Murel20102010, vol.39, no.5
GaAs/AlAs Resonant-Tunneling Diode for Subharmonic MixersN. V. Alkeev; S. V. Averin; A. A. Dorofeev; N. B. Gladysheva; M. Yu. Torgashin20102010, vol.39, no.5
Magnetoconcentration Effect on a Base on Junction of a Bipolar MagnetotransistorR. D. Tikhonov20102010, vol.39, no.5
A Table MOS Transistor Model Parameter ControlV. V. Denisenko20102010, vol.39, no.5
Effect of Additions of Ar and He on the Parameters and Composition of the HBr PlasmaA. A. Smirnov; A. M. Efremov; V. I. Svettsov20102010, vol.39, no.5



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