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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2013, vol.42, no.1 2013, vol.42, no.2 2013, vol.42, no.3 2013, vol.42, no.4 2013, vol.42, no.5 2013, vol.42, no.6
2013, vol.42, no.7 2013, vol.42, no.8

题名作者出版年年卷期
Quantum Operations on Charge Qubits with the Electrostatic Control in Semiconductor CavitiesA. V. Tsukanov; I. Yu. Kateev20132013, vol.42, no.4
Plasma Parameters and Mechanisms of GaAs Reactive Plasma Etching in Mixtures of HCl with Argon and ChlorineA. V. Dunaev; S. A. Pivovarenok; A. M. Efremov; V. I. Svettsov; S. P. Kapinos; A. V. Yudina20132013, vol.42, no.4
Influence of Doping the Base Surface on Parameters of a Bipolar Dual-Collector Lateral MagnetotransistorA. Yu. Krasyukov; R. D. Tikhonov; A. A. Cheremisinov20132013, vol.42, no.4
Simulating the Deposition and Synthesis of Amorphous Hydrogenated Carbon FilmsV. A. Tarala20132013, vol.42, no.4
Formation of the Wave Nanorelief at Surface Erosion by Ion Bombardment within the Bradley-Harper ModelA. V. Metlitskaya; A. N. Kulikov; A. S. Rudy20132013, vol.42, no.4
Photovoltaic Effect in a Structure Based on Amorphous and Nanoporous Silicon Formed by Plasma Immersion Ion ImplantationA. V. Myakon'kikh; A. E. Rogozhin; K. V. Rudenko; V. F. Lukichev20132013, vol.42, no.4
The Behavioral Model of a Split Capacitor Array Involved in the Successive Approximation Register ADC and Taking into Account the Effect of Parasitic CapacitorsD. L. Osipov; Yu. I. Bocharov; V. A. Butuzov20132013, vol.42, no.4