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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2013, vol.42, no.1 2013, vol.42, no.2 2013, vol.42, no.3 2013, vol.42, no.4 2013, vol.42, no.5 2013, vol.42, no.6
2013, vol.42, no.7 2013, vol.42, no.8

题名作者出版年年卷期
New Organometallic Precursors and Processes for Chemical Vapor Deposition in the Technology of NanomaterialsF. A. Kuznetsov; T. P. Smirnova; N. I. Fainer; N. B. Morozova; I. K. Igumenov20132013, vol.42, no.8
Thermoelectric Properties of the (Bi,Sb)_2Te_3-Based Material Obtained by Spark Plasma SinteringI. A. Drabkin; V. V. Karataev; V. B. Osvenskii; Yu. N. Parkhomenko; A. I. Sorokin; L. P. Bulat; G. I. Pivovarov; V. T. Bublik; N. Yu. Tabachkova20132013, vol.42, no.8
Isotopic Effects in the Infrared Absorption Spectra of Electrically Active Impurities in Silicon 28, 29, and 30 with High Isotopic EnrichmentT. V. Kotereva; A. V. Gusev; V. A. Gavva; E. A. Kozyrev20132013, vol.42, no.8
Initiation of a Polarized State in Thin Lithium Niobate Films Synthesized on Isolated Silicon SubstratesD. A. Kiselev; R. N. Zhukov; A. S. Bykov; M. D. Malinkovich; Yu. N. Parkhomenko; E. A. Vygovskaya20132013, vol.42, no.8
Promising Materials of AcoustoelectronicsD. V. Roshchupkin; D. V. Irzhak; E. V. Emelin; R. R. Fakhrtdinov; O. A. Buzanov; S. A. Sakharov20132013, vol.42, no.8
Features of Defect Formation under the Thermal Treatment of Dislocation-Free Single-Crystal Large-Diameter Silicon Wafers with the Specified Distribution of Oxygen-Containing Gettering Centers in the BulkYu. B. Vasil'ev; N. A. Verezub; M. V. Mezhennyi; V. S. Prosolovich; A. I. Prostomolotov; V. Ya. Reznik20132013, vol.42, no.8
New Trends in the Development of the Technology for the Production of Ultraviolet Light-Emitting DiodesS. Yu. Kurin; A. A. Antipov; I. S. Barash; V. T. Bublik; H. Helava; E. N. Mokhov; S. S. Nagalyuk; A. D. Roenkov; T. Yu. Chemekova; K. D. Scherbatchev; Yu. N. Makarov20132013, vol.42, no.8
Studying the Uniformity of the Surface Resistance of Ti, Al, Ni, Cr, and Au Metal Films on SiliconK. D. Vanyukhin; S. P. Kobeleva; Yu. A. Kontsevoi; V. A. Kurmachev; L. A. Seidman20132013, vol.42, no.8
Mechanisms of Electroconductivity in Silicon-Carbon Nanocomposites with Nanosized Tungsten Inclusions within a Temperature Range of 20-200℃I. M. Anfimov; S. P. Kobeleva; M. D. Malinkovich; I. V. Shchemerov; O. V. Toporova; Yu. N. Parkhomenko20132013, vol.42, no.8
Studying the Formation of Nanoporous and Nanotubular Titanium Layers by Electrochemical Impedance SpectroscopyL. A. Balagurov; M. A. Agafonova; E. A. Petrova; A. G. Yakovenko20132013, vol.42, no.8
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