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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2016, vol.45, no.1 2016, vol.45, no.2 2016, vol.45, no.3 2016, vol.45, no.4 2016, vol.45, no.5 2016, vol.45, no.6
2016, vol.45, no.7 2016, vol.45, no.8/9

题名作者出版年年卷期
Simulation of the Spectroscopic Response and Electron Dynamics in a Double Quantum DotA. V. Tsukanov; V. G. Chekmachev20162016, vol.45, no.1
Influence of the Annealing Temperature on the Ferroelectric Properties of Niobium-Doped Strontium-Bismuth TantalateD. A. Golosov; S. M. Zavadski; V. V. Kolos; A. S. Turtsevich; D. E. Okodzhi20162016, vol.45, no.1
Formation and Certain Properties of Zinc Chalcogenide Nanolayers on Semiconductor MatricesYu. K. Ezhovskii; N. V. Zakharova20162016, vol.45, no.1
Characteristics of Chloride Memristors Based on Nanothick Metal FilmsR. Yu. Rozanov; V. A. Kondrashov; V. K. Nevolin; Yu. A. Chaplygin20162016, vol.45, no.1
System-on-Chip: Specifics of Radiation Behavior and Estimation of Radiation HardnessO. A. Kalashnikov; P. V. Nekrasov; A. Yu. Nikiforov; V. A. Telets; G. V. Chukov; V. V. Elesin20162016, vol.45, no.1
Effect of a Diamond Heat Spreader on the Characteristics of Gallium Nitride-Based TransistorsK. S. Grishakov; V. F. Elesin; N. I. Kargin; R. V. Ryzhuk; S. V. Minnebaev20162016, vol.45, no.1
Influence of Ionizing Radiation on the Parameters of an Operational Amplifier Based on Complementary Bipolar TransistorsO. V. Dvornikov; V. A. Tchekhovski; V. L. Dziatlau; N. N. Prokopenko20162016, vol.45, no.1
Multilayer Graphene-Based Flash MemoryYu. N. Novikov; V. A. Gritsenko; G. Ya. Krasnikov; O. M. Orlov20162016, vol.45, no.1
The Circuit and Functional Blocks for Radiation-Hard Transceiver LSICs in SOI CMOSG. N. Nazarova; V. V. Elesin; A. Yu. Nikiforov; A. G. Kuznetsov; N. A. Usachev; D. M. Amburkin20162016, vol.45, no.1



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