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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2016, vol.45, no.1 2016, vol.45, no.2 2016, vol.45, no.3 2016, vol.45, no.4 2016, vol.45, no.5 2016, vol.45, no.6
2016, vol.45, no.7 2016, vol.45, no.8/9

题名作者出版年年卷期
Mathematical Simulation of the Influence of the Doping Concentration on the Drain Current of an SOI Field-Effect Hall SensorA. V. Kozlov; M. A. Korolev; S. S. Petrunina20162016, vol.45, no.7
Formation of Nanosized Elements of Microwave Transistor Gates by Ion Beam LithographyK. K. Lavrentyev; V. K. Nevolin; R. Yu. Rozanov; K. A. Tsarik; A. A. Zaitsev20162016, vol.45, no.7
Study of RF Transistor with Submicron T-Shaped Gate Fabricated by Nanoimprint LithographyV. I. Egorkin; A. A. Zaitsev; S. S. Shmelev20162016, vol.45, no.7
TCAD Leakage Current Analysis of a 45 nm MOSFET Structure with a High-k DielectricK. O. Petrosyants; D. A. Popov; L. M. Sambursky; I. A. Kharitonov20162016, vol.45, no.7
Features of the Effect of the Supply Current on the Operation Mode of an Oscillator Based on an IMPATT Diode Taking into Account the Reflected SignalA. V. Dem'yanenko20162016, vol.45, no.7
A Method for Calculating the Thermal Characteristics of Silicon TVS-Diodes in the Pulse ModeF. I. Grigoriev; A. B. Aleksandrova; V. A. Gafurov20162016, vol.45, no.7
320 × 240 CMOS Array for the Spectral Range of 3-5 μm Based on PtSi PhotodiodesA. M. Belin; V. I. Zolotarev; A. Yu. Nikiforov; A. D. Popov20162016, vol.45, no.7
Efficiency of Frequency Transformation on MOS Transistors with a Built-In Channel under Intensively Handicapped RadioreceptionD. V. Zhuravlev; A. I. Mushta20162016, vol.45, no.7
Development and Research of MIS Varicaps with Charge TransferYu. V. Surin; A. B. Spiridonov; S. V. Litsoev20162016, vol.45, no.7
Intelligent System and Electron Components for Controlling Individual Heat ConsumptionYu. I. Shtern; Ya. S. Kozhevnikov; D. B. Rygalin; M. Yu. Shtern; I. S. Karavaev; M. S. Rogachev20162016, vol.45, no.7
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