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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
0.15 μm passivated InP-based HEMT's MMIC technology with high thermal stability in hydrogen ambientM. Chertouk; M. Dammann; K. Kohler; G. Weimann20002000, vol.21, no.3
1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/Oxidation processYider Wu; Yi-Mu Lee; Gerald Lucovsky20002000, vol.21, no.3
A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallizationWon Kyu Kwak; Bong Rae Cho; Soo Young Yoon; Seong Jin Park; Jin Jang20002000, vol.21, no.3
A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping techniqueYu-Lin Chu; Ching-Yuan Wu20002000, vol.21, no.3
An amorphous silicon thin-film transistor with fully self-aligned top gate structureM. J. Powell; C. Glasse; P. W. Green; I. D.French; I. J. Stemp20002000, vol.21, no.3
Extremely high transconductance Ge/Si{sub}0.4Ge{sub}0.6 p-MODFET's grown by UHV-CVDS. J. Koester; R. Hammond; J. O. Chu20002000, vol.21, no.3
Gate oxide integrity of thermal oxide grow on high temperature formed Si{sub}0.3Ge{sub}0.7Y. H. Wu; Albert Chin20002000, vol.21, no.3
High performance 0.1 μm dynamic threshold MOSFET using indium channel implantationSun-Jay Chang; Chun-Yen Chang; Tien-Sheng Chao; Tiao-Yuan Huang20002000, vol.21, no.3
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structureJeffrey Mun Pun Yue; Wai Kin Chim; Byung Jin Cho; Daniel Siu Hung Chan; Wei Han Qin; Young-Bog Kim; Se-Aug Jang; In-Seok Yeo20002000, vol.21, no.3
Limitations of shift-and-ratio Based L{sub}eff extraction techniques for MOS transistors with halo or pocket implantsHans van Meer; Kirklen Henson; Jeong-Ho Lyu; Maarten Rosmeulen; Stefan Kubicek; Nadince Collaert; Kristin De Meyer20002000, vol.21, no.3
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