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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2004, vol.25, no.1 2004, vol.25, no.10 2004, vol.25, no.11 2004, vol.25, no.12 2004, vol.25, no.2 2004, vol.25, no.3
2004, vol.25, no.4 2004, vol.25, no.5 2004, vol.25, no.6 2004, vol.25, no.7 2004, vol.25, no.8 2004, vol.25, no.9

题名作者出版年年卷期
A Stacked CMOS Technology on SOI SubstrateShengdong Zhang; Ruqi Han; Xinnan Lin; Xusheng Wu; Mansun Chan20042004, vol.25, no.9
Novel and Robust Silicon-Controlled Rectifier (SCR) Based Devices for On-Chip ESD ProtectionJavier A. Salcedo; Juin J. Liou; Joseph C. Bernier20042004, vol.25, no.9
A New Method to Extract EOT of Ultrathin Gate Dielectric With High Leakage CurrentZhijiong Luo; T. P. Ma20042004, vol.25, no.9
High-Frequency Performance of Subthreshold SOI MESFETsJinman Yang; John Spann; Robert Anderson; Trevor Thornton20042004, vol.25, no.9
Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification MethodologyN. K. Zous; M. Y. Lee; W. J. Tsai; Albert Kuo; L. T. Huang; T. C. Lu; C. J. Liu; Tahui Wang; W. P. Lu; Wenchi Ting; Joseph Ku; Chih-Yuan Lu20042004, vol.25, no.9
Tri-State Logic Using Vertically Integrated Si-SiGe Resonant Interband Tunneling Diodes With Double NDRNiu Jin; Sung-Yong Chung; Roux M. Heyns; Paul R. Berger; Ronghua Yu; Phillip E. Thompson; Sean L. Rommel20042004, vol.25, no.9
A Novel Erase Scheme to Suppress Overerasure in a Scaled 2-Bit Nitride Storage Flash Memory CellChih-Chieh Yeh; Tahui Wang; Wen-Jer Tsai; Tao-Cheng Lu; Yi-Ying Liao; Hung-Yueh Chen; Nian-Kai Zous; Wenchi Ting; Joseph Ku; Chih-Yuan Lu20042004, vol.25, no.9
Double Snapback Characteristics in High-Voltage nMOSFETs and the Impact to On-Chip BSD Protection DesignMing-Dou Ker; Kun-Hsien Lin20042004, vol.25, no.9
Evidence for Two Distinct Positive Trapped Charge Components in NBTI Stressed p-MOSFETs Employing Ultramin CVD Silicon Nitride Gate DielectricD. S. Ang; K. L. Pey20042004, vol.25, no.9
Suppression of the Floating-Body Effect in Poly-Si Thin-Film Transistors With Self-Aligned Schottky Barrier Source and Ohmic Body Contact StructurePo-Yi Kuo; Tien-Sheng Chao; Tan-Fu Lei20042004, vol.25, no.9
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