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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2004, vol.25, no.1 2004, vol.25, no.10 2004, vol.25, no.11 2004, vol.25, no.12 2004, vol.25, no.2 2004, vol.25, no.3
2004, vol.25, no.4 2004, vol.25, no.5 2004, vol.25, no.6 2004, vol.25, no.7 2004, vol.25, no.8 2004, vol.25, no.9

题名作者出版年年卷期
Statistical Analysis of Soft and Hard Breakdown in 1.9-4.8-nm-thick Gate OxidesWataru Mizubayashi; Yuichi Yoshida; Hideki Murakami; Seiichi Miyazaki; Masataka Hirose20042004, vol.25, no.5
Switching-Mode Dependence of Inductive Noise in VLSI Power Bus LinesJung-Suk Goo; Stephen Hale; Luis Zamudio; Mario M. Peiella; Richard Klein; Steven Butler; Judy Xilin An; Michael Lee; Ali B. Icel20042004, vol.25, no.5
New Unipolar Switching Power Device Figures of MeritAlex Q. Huang20042004, vol.25, no.5
Bandwidth Enhancement in an Integratable SiGe Phototransistor by Removal of Excess CarriersZ. Pel; J. -W. Shi; Y.-M. Hsu; F. Yuan; C. S. Liang; S. C. Lu; W; Y. Hsieh; M.-J. Tsai; C. W. Liu20042004, vol.25, no.5
Optimization of RF Linearity in DG-MOSFETsSavas Kaya; Wei Ma20042004, vol.25, no.5
8.5-mΩ·cm{sup}2 600-V Double-Epitaxial MOSFETs in 4H-SiCShinsuke Harada; Mitsuo Okamoto; Tsutomu Yatsuo; Kaziihiro Adachi; Kenji Fukuda; Kazuo Arai20042004, vol.25, no.5
Influence of Surface Treatment Prior to ALD High-ft Dielectrics on the Performance of SiGe Surface-Channel pMOSFETsD. Wu; J. Lu; H. Radamson; P. -E. Hellstrom; S. -L. Zhang; M. Ostling; E. Vainonen-Ahlgren; E. Tois; M. Tuominen20042004, vol.25, no.5
A Woven Inverter Circuit for e-Textile ApplicationsEitan Bonderover; Sigurd Wagner20042004, vol.25, no.5
Characterizing Diodes for RF BSD ProtectionGuang Chen; Haigang Feng; Haolu Xie; Rouying Zhan; Qiong Wu; Xiaokang Guan; Albert Wang; Kaoru Takasuka; Satoru Tamura; Zhihua Wang; Chun Zhang20042004, vol.25, no.5
Source-Drain Symmetry in Unified Regional MOSFET ModelSiau Ben Chiah; Xing Zhou; Khee Yong Lim; Lap Chan; Sanford Chu20042004, vol.25, no.5
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