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期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrateS. Arulkumaran; M. Miyoshi; T. Egawa; H. Ishikawa; T. Jimbo20032003, vol.24, no.8
Copper gate AlGaN/GaN HEMT with low gate leakage currentJin-Ping Ao; Daigo Kikuta; Naotaka Kubota; Yoshiki Naoi; Yasuo Ohno20032003, vol.24, no.8
High quality Al{sub}2O{sub}3 IPD with NH{sub}3 surface nitridationYeong Yuh Chen; Chao Hsin Chien; Jen Chung Lou20032003, vol.24, no.8
Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitorsC. H. Ng; K. W. Chew; S. F. Chu20032003, vol.24, no.8
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drainHsiao-Wen Zan; Ting-Chang Chang; Po-Sheng Shih; Du-Zen Peng; Po-Yi Kuo; Tiao-Yuan Huang; Chun-Yen Chang; Po-Tsun Liu20032003, vol.24, no.8
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectricKow-Ming Chang; Wen-Chih Yang; Chiu-Pao Tsai20032003, vol.24, no.8
Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETsJ. P. Colinge; J. W. Park; W. Xiong20032003, vol.24, no.8
A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structureKam Hung Yuen; Tsz Yin Man; Alain C. K. Chan; Mansun Chan20032003, vol.24, no.8
A multiple-terminal gate charging modelWallace Lin20032003, vol.24, no.8



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