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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2018 2019 2020 2021 2022

2002, vol.102, no.114 2002, vol.102, no.115 2002, vol.102, no.116 2002, vol.102, no.175 2002, vol.102, no.176 2002, vol.102, no.177
2002, vol.102, no.294 2002, vol.102, no.326 2002, vol.102, no.363 2002, vol.102, no.4 2002, vol.102, no.456 2002, vol.102, no.5
2002, vol.102, no.502 2002, vol.102, no.638 2002, vol.102, no.639 2002, vol.102, no.77

题名作者出版年年卷期
Growth of transition-metal added GaN and room temperature ferromagnetismYi-Kai Zhou; Masahiko Hashimo; Masahito Kanamura; Ryo Asano; Hajime Asahi20022002, vol.102, no.115
Structural disorder and optical property of InGaAsN alloy semiconductorSakuntam Sanorpim; Fumihiro Nakajima; Shigeyuki Imura; Eriko Takuma; Ryuji Katayama; Kentaro Onabe; Hideki Ichinose; Yasuhiro Shiraki20022002, vol.102, no.115
Luminescence dynamics of InGaN single quantum well by time-resolve near-field spectroscopyAkio Kaneta; Giichi Marutsuki; Yukio Narukawa; Takashi Mukai; Yoichi Kawakami; Shigeo Fujita20022002, vol.102, no.115
Time and spatial resolved observation of the photothermal processes for the low dislocated GaNKoichi Okamoto; Kenichi Inoue; Yoichi Kawakami; Shigeo Fujita; Jungkwoun Choi; Masahide Terazima; Ayumu Tsujimura; Isao Kidoguchi20022002, vol.102, no.115
Time-resolved electroluminescence study of green light-emitting diodeTakamasa Kuroda; Tomohito Yabushita; Atsushi Tackeuchi; Naochika Horio; Kazuyoshi Taniguchi; Youji Yamashita; Takako Chihiro; Chirhio Funaoka20022002, vol.102, no.115
Threading dislocations in GaN and GaInNTakao Miyajima; Tomonori Hino; Shigetaka Tomiya; Katsunori Yanashima; Tsunenori Asatsuma; Toshimasa Kobyashi; Masao Ikeda20022002, vol.102, no.115
Comparison of emission properties between cubic and hexagonal InGaN - effect of polarization field and exciton localizationShigefusa F. Chichibu; Tsunemasa Kuroda; Takeyoshi Onuma; Toshio Kitamura; Takayuki Sota; Atsushi Tackeuchi; Steven P. Denbaars; Shuji Nakamura; Hajime Okumura20022002, vol.102, no.115
Optical-biased electroreflectance of cubic GaN/GaAs(001) heterostructuresRyuji Katayama; Masayuki Kuroda; Kentaro Onabe; Yasuhiro Shiraki20022002, vol.102, no.115
Low-temperature activation of p-type GaN and its mechanismIchitaro Waki; Hiroshi Fujioka; Masaharu Oshima; Hisayuki Miki; Mineo Okuyama20022002, vol.102, no.115
Formation of low-resistance ohmic contact to p-GaN using strained InGaN contact layerKazuhide Kumakura; Toshiki Makimoto; Naoki Kobayashi20022002, vol.102, no.115
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