先进制造业知识服务平台
国家科技图书文献中心机械分馆　　工信部产业技术基础公共服务平台　　国家中小企业公共服务示范平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2002, vol.102, no.114 2002, vol.102, no.115 2002, vol.102, no.116 2002, vol.102, no.175 2002, vol.102, no.176 2002, vol.102, no.177
2002, vol.102, no.294 2002, vol.102, no.326 2002, vol.102, no.363 2002, vol.102, no.4 2002, vol.102, no.456 2002, vol.102, no.5
2002, vol.102, no.502 2002, vol.102, no.638 2002, vol.102, no.639 2002, vol.102, no.77

题名作者出版年年卷期
Analysis of characteristics of PHEMT's fabricated by gate recess methodsSeong Dae Lee; Dan An; Hyung Moo Park; Hyun Chang Park; Sam Dong Kim; Jin Koo Rhee20022002, vol.102, no.176
GaAs PHEMT/HBT high power amplifiers for mobile communication terminalsKazutomi Mori; Shintaro Shinjo20022002, vol.102, no.176
Device technologies for 40-Gbit/s InP HBT ICsKenji Kurishima; Minoru Ida; Noriyuki Watanabe; Kiyoshi Ishii; Hideyuki Nosaka; Shoji Yamahata20022002, vol.102, no.176
Properties and control of surfaces of GaN and related materialsHideki Hasegawa; Tamotsu Hashizume20022002, vol.102, no.176
A fully-integrated broadband amplifier MMIC employing a novel chip size packageMasaaki Nishijima; Young Yun; Motonari Katsuno; Hidetoshi Ishida; Katsuya Minagawa; Toshihide Nobusada; Tsuyoshi Tanaka20022002, vol.102, no.176
S-band 38dBm power amplifier using PHEMT and FR4 substrateH. Z. Liu; Y. H. Wang; C. C. Hsu; C. H. Chang; W. Wu; C. L. Wu; C. S. Chang20022002, vol.102, no.176
K-band p-HEMT-based MMIC VCO using a a miniaturized hairpin resonator and a three-terminal p-HEMT varactor with low phase noise and high output power propertiesCheol-Gyu Hwang; Jeong-Seon Lee; Jong-In Song20022002, vol.102, no.176
Studies of electron beam evaporated SiO{sub}2/AlGaN/GaN-metal-oxide-semiconductor HEMTs on sapphire substrateS. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo20022002, vol.102, no.176
Analytic model for the gate current of MODFET's with and without photonic controlHwe-Jong Kim; Dong Myong Kim; Ilki Han; Won-June Choi; Jacques Zimmermann; Jungil Lee20022002, vol.102, no.176
Spontaneous and piezoelectric polarization charge effects on contact resistance in AlGaN/GaN HEMT structuresMayumi Hirose; Kunio Tsuda20022002, vol.102, no.176
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  机械工业信息研究院 2018-2024