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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002, vol.31, no.1 2002, vol.31, no.2 2002, vol.31, no.3 2002, vol.31, no.4 2002, vol.31, no.5 2002, vol.31, no.6

题名作者出版年年卷期
Two-dimensional epitaxial nucleation with large critical-nucleus sizeI. G. Neizvestny; N. L. Shvarts; Z. Sh. Yanovitskaya20022002, vol.31, no.2
Thermal oxidation of InP promoted by the formation of N{sub}2OI. Ya. Mittova; S. S. Lavrushina; E. V. Popova; A. A. Muratov; V. M. Kashkarov20022002, vol.31, no.2
Solid-phase reactions in the thermal oxidation of Ni/GaAs heterostructuresI. Ya. Mittova; E. V. Tomina; A. S. Sukhochev; A. N. Prokin; A. O. Vasyukevich20022002, vol.31, no.2
Porous-silicon formation in HF-HNO{sub}3-H{sub}2O etchantsE. A. Starostina; V. V. Starkov; A. F. Vyatkin20022002, vol.31, no.2
Evolution of dopant concentration from a Gaussian profile in a nonuniform temperature fieldV. I. Rudakov; V. V. Ovcharov20022002, vol.31, no.2
Wet etching of ion-implanted silicon dioxide monitored by atomic-force microscopyA. A. Bukharaev; N. I. Nurgazizov; A. V. Sugonyako20022002, vol.31, no.2
Ellipsometric characterization of the transition layer in SiC/AlN structuresV. V. Luchinin; M. F. Panov20022002, vol.31, no.2
Model and logic gates for quantum computing with a two-level system in a resonant-frequency fieldA. L. Danilyuk; V. E. Borisenko20022002, vol.31, no.2
Double-junction Schottky diodes using a Ti/Si/Al structureD. A. Andreev; N. S. Grushko20022002, vol.31, no.2
Local ellipsometric inspection of small windowsE. S. Lonskii20022002, vol.31, no.2
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