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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2002 2003 2004 2005 2006 2007
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2020 2021 2022 2023

2002, vol.31, no.1 2002, vol.31, no.2 2002, vol.31, no.3 2002, vol.31, no.4 2002, vol.31, no.5 2002, vol.31, no.6

题名作者出版年年卷期
Linear standard for SEM-AFM microelectronics dimensional metrology in the range 0.01-100μmCh. P. Volk; E. S. Gornev; Yu. A. Novikov; Yu. V. Ozerin; Yu. I. Plotnikov; A. M. Prokhorov; A. V. Rakov20022002, vol.31, no.4
ULSI gap filling with a thin CVD SiO-based insulator: a reviewV. Y. Vassiliev20022002, vol.31, no.4
DeleCut: producing high-quality SOI structures by hydrogen ion implantationV. P. Popov; I. V. Antonova; A. A. Frantsuzov; L. N. Safronov; A. I. Popov; O. V. Naumova; A. Kh. Antonenko; D. V. Kilanov; I. V. Mironova20022002, vol.31, no.4
Photoresists used as mask materials in ion implantation for the CMOS technology: optimizing mask thicknessS. V. Gran'ko; F. F. Komarov; A. V. Leont'ev20022002, vol.31, no.4
Open microwave resonator used for the characterization of a helicon-source plasmaYu. P. Baryshev; I. N. Moskalev; I. P. Koritkin; A. A. Orlikovsky; A. O. Prokof'ev20022002, vol.31, no.4
Lateral injection utilized for improving the performance of microwave bipolar transistorsYu. P. Snitovskii20022002, vol.31, no.4
Carrier trapping and scattering in Ge-doped SiO{sub}2D. I. Brinkevich; V. S. Prosolovich; Yu. N. Yankovskii20022002, vol.31, no.4
Polarity-dependent electrical mass transfer in silicon: the location and shape of the metal-like bridgeB. A. Panfilov20022002, vol.31, no.4
Structural and behavioral irreproducibility of solid materials: a new insight into the problemN. V. Bodyagin; S. P. Vikhrov; S. M. Mursalov; I. V. Tarasov20022002, vol.31, no.4
Effect of gamma irradiation on the surface morphology of SOS filmsA. N. Kiselev; G. A. Maksimov; V. A. Perevoshchikov; V. D. Skupov; D. O. Filatov20022002, vol.31, no.4



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