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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2019, vol.48, no.1 2019, vol.48, no.2 2019, vol.48, no.3 2019, vol.48, no.4 2019, vol.48, no.5 2019, vol.48, no.6
2019, vol.48, no.7 2019, vol.48, no.8

题名作者出版年年卷期
Creation and Development of the Ion Beam TechnologyYu. P. Maishev20192019, vol.48, no.6
Parameters of Plasma and Way of Etching Silicon in a CF_4+CHF_3+O_2 MixtureA. M. Efremov; D. B. Murin; K.-H. Kwon20192019, vol.48, no.6
Simulation of the Effect of the Grain Boundary Structure on Effective Ionic Charges in the Processes of ElectromigrationT. M. Makhviladze; M. E. Sarychev20192019, vol.48, no.6
Modeling the Charge Collection from a Track of an Ionizing Particle in Upset Hardened CMOS Trigger ElementsV. Ya. Stenin; Yu. V. Katunin20192019, vol.48, no.6
Modeling the CMOS Characteristics of a Completely Depleted Surrounding-Gate Nanotransistor and an Unevenly Doped Working RegionN. V. Masal'skii20192019, vol.48, no.6
Effect of the Pressure of Oxygen on the Plasma Oxidation of the Titanium Nitride SurfaceV. M. Mordvintsev; V. V. Naumov; S. G. Simakin20192019, vol.48, no.6
Estimating the Electric Mode Effect (Active and Passive) on the Dose of Radiation Resistance of MicrocircuitsO. A. Kalashnikov20192019, vol.48, no.6
Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose EffectsM. E. Chernyak; E. V. Ranneva; A. V. Ulanova; A. Yu. Nikiforov; A. I. Verizhnikov; A. M. Tsyrlov; V. S. Fedosov; A. N. Shchepanov; V. D. Kalashnikov; D. O. Titovets20192019, vol.48, no.6
Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric FieldsS. M. Asadov; S. N. Mustafaeva; V. F. Lukichev20192019, vol.48, no.6
A Novel Parameter Identification Approach for C-V-T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion OptimizerW. Filali; E. Garoudja; S. Oussalah; M. Mekheldi; N. Sengouga; M. Henini20192019, vol.48, no.6



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