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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2019, vol.48, no.1 2019, vol.48, no.2 2019, vol.48, no.3 2019, vol.48, no.4 2019, vol.48, no.5 2019, vol.48, no.6
2019, vol.48, no.7 2019, vol.48, no.8

题名作者出版年年卷期
Studies on Charge Carrier Transport in an Injection Laser with Frequency Modulation of the Optical RadiationB. G. Konoplev; E. A. Ryndin; I. V. Pisarenko20192019, vol.48, no.7
A study of the Composition of Tellurium Vapor by the Static MethodE. N. Vigdorovich20192019, vol.48, no.7
Simulating and Ensuring the Reliability of the Elements and Joints of Three-Dimensional Microelectronics ModulesA. I. Pogalov; G. A. Blinov; E. Y. Chugunov20192019, vol.48, no.7
Histogram Measurement of ADC Nonlinearities by Using Incomplete-Scale Sine WavesA. A. Rybakov; N. E. Reznichenko20192019, vol.48, no.7
Junctionless MOS-Transistor with a Low Subthreshold CurrentM. A. Korolev; A. S. Klyuchnikov; D. I. Efimova20192019, vol.48, no.7
Developing the Guard Ring Topology of Power Silicon Diodes with a Blocking Voltage of up to 6.7 kVO. V. Sopova; T. B. Kritskaya20192019, vol.48, no.7
Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried OxideK. O. Petrosyants; D. A. Popov20192019, vol.48, no.7
Development of an Area Image Sensor Pixel for an X-Ray DetectorD. A. Suponnikov; A. N. Putilin; E. A. Tatarinova; Z. G. Zhgunev; A. R. DabagoV20192019, vol.48, no.7
Methods of Improving the Accuracy of Simulating Delays and Peak Currents of Combinational CMOS-Circuits at the Logical Design LevelG. A. Ivanova; D. I. Ryzhova20192019, vol.48, no.7
Studying the Influence of Temperature on the Operation of a Resonator of a Frequency Micromechanical AccelerometerAung Thura; B. M. Simonov; S. P. Timoshenkov; V. F. Shilov; Kyaw Myo Aung20192019, vol.48, no.7
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