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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Simulation of Single Event Effects in STG DICE Memory CellsYu. V. Katunin; V. Ya. Stenin20182018, vol.47, no.1
Basic Techniques of Increasing Resolution of Photopolymerizable CompositionsV. M. Treushnikov; S. P. Molodnyakov; V. V. Semenov20182018, vol.47, no.1
Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier DischargeD. V. Sitanov; S. A. Pivovarenok20182018, vol.47, no.1
Atomic Layer Deposition in the Production of a Gate HkMG Stack Structure with a Minimum Topological Size of 32 nmK. V. Rudenko; A. V. Myakon’kikh; A. E. Rogozhin; O. P. Gushchin; V. A. Gvozdev20182018, vol.47, no.1
Simulating the Effects of Internal Mechanical Stresses on the Decomposition Kinetics of a Supersaturated Oxygen Solution in SiliconT. M. Makhviladze; M. E. Sarychev20182018, vol.47, no.1
A System for Logical Design of Custom CMOS VLSI Functional Blocks with Reduced Power ConsumptionP. N. Bibilo; N. A. Avdeev; S. N. Kardash; N. A. Kirienko; Yu. Yu. Lankevich; I. P. Loginova; V. I. Romanov; D. I. Cheremisinov; L. D. Cheremisinova20182018, vol.47, no.1
Studying the Thermodynamic Characteristics of Anodic AluminaA. I. Vorob’eva; D. L. Shimanovich; O. A. Sycheva20182018, vol.47, no.1