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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Parameters of Plasma and Kinetics of Active Particles in CF4(CHF3) + Ar Mixtures of a Variable Initial CompositionA. M. Efremov; D. B. Murin; K.-H. Kwon20182018, vol.47, no.6
Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical MethodsO. S. Trushin; S. G. Simakin; S. V. Vasiliev; E. A. Smirnov20182018, vol.47, no.6
Stacked Gate FinFET with Gate Extension for Improved Gate ControlSangeeta Mangesh; Pradeep Chopra; Krishan Saini20182018, vol.47, no.6
Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum ChamberE. E. Rodyakina; S. V. Sitnikov; D. I. Rogilo; A. V. Latyshev20182018, vol.47, no.6
Modeling the Dynamics of the Integral Dielectric Permittivity of a Porous Low-K Organosilicate Film during the Dry Etching of a Photoresist in O2PlasmaA. A. Rezvanov; I. V. Matyushkin; O. P. Gushchin; E. S. Gornev20182018, vol.47, no.6
Simulation the Effects of Single Nuclear Particles on STG RS Triggers with Transistors Spacing into Two GroupsV. Ya. Stenin; Yu. V. Katunin20182018, vol.47, no.6
Operational Features of MEMS with an Even Number of ElectrodesV. P. Dragunov; D. I. Ostertak20182018, vol.47, no.6
Etching of GaAs in the Plasma of a Freon R-12–Argon (CCl2F2/Ar) MixtureD. B. Murin; A. V. Dunaev20182018, vol.47, no.6
Investigation of Alloyed Ohmic Contacts in Epitaxial Tellurium-Doped Gallium Arsenide LayersV. I. Egorkin; V. E. Zemlyakov; A. V. Nezhentsev; V. I. Garmash; N. A. Kalyuzhnyi; S. A. Mintairov20182018, vol.47, no.6
Etching of SiC in Low Power Inductively-Coupled PlasmaA. A. Osipov; S. E. Aleksandrov; Yu. V. Solov’ev; A. A. Uvarov20182018, vol.47, no.6



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