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2018, vol.47, no.1	2018, vol.47, no.2	2018, vol.47, no.3	2018, vol.47, no.4	2018, vol.47, no.5	2018, vol.47, no.6
2018, vol.47, no.7	2018, vol.47, no.8

题名	作者	出版年	年卷期
Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer	A. N. Aleshin; N. V. Zenchenko; D. S. Ponomarev; O. A. Ruban	2018	2018, vol.47, no.2
Field Emission Properties of Nanostructured Silicon Cathode Arrays	R. K. Yafarov; S. Yu. Suzdaltsev; V. Ya. Shanygin	2018	2018, vol.47, no.2
Influence of Technological Modes on the Electrophysical Properties of Films of Polyacrylonitrile Doped with Metal Particles	T. A. Bednaya; S. P. Konovalenko	2018	2018, vol.47, no.2
The Element of Matching on an STG DICE Cell for an Upset Tolerant Content Addressable Memory	V. Ya. Stenin; Yu. V. Katunin	2018	2018, vol.47, no.2
Schottky Barrier Infra-Red Sensors Sensitive to Radiation of Quantum Energy Higher Than the Potential Barrier Height	E. A. Kerimov; N. F. Kazymov; S. N. Musaeva	2018	2018, vol.47, no.2
Generation and Concentration of Terahertz Radiation in a Microcavity with an Open Quantum Dot	A. V. Tsukanov; I. Yu. Kateev	2018	2018, vol.47, no.2
Electrophysical Parameters and Radiation Spectra of Boron Trichloride Plasma	D. B. Murin; A. V. Dunaev	2018	2018, vol.47, no.2
Atomic Layer Deposition of Aluminum Nitride Using Tris(diethylamido)aluminum and Hydrazine or Ammonia	A. I. Abdulagatov; Sh. M. Ramazanov; R. S. Dallaev; E. K. Murliev; D. K. Palchaev; M. Kh. Rabadanov; I. M. Abdulagatov	2018	2018, vol.47, no.2