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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic ApplicationsV.?D. Kravtsova; M.?B. Umerzakova; N.?E. Korobova; D.?V. Vertyanov20182018, vol.47, no.7
A Method for the Development of Indicators of a Transient Period Based on Short-Pulse Shapers in Asynchronous AddersA. A. Starykh; A. V. Kovalev20182018, vol.47, no.7
Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure LayersE. N. Vigdorovich20182018, vol.47, no.7
Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar TransistorsM. O. Hrapov; A. V. Gluhov; V. A. Gridchin; S. V. Kalinin20182018, vol.47, no.7
Use of the Modification of the Petri Nets Algorithm for the Logic Simulation of Gate-Level Logic CircuitsD. A. Bulakh; G. G. Kazennov; A. V. Lapin20182018, vol.47, no.7
Calculation of Transients and Parameters of the Circuit of a Voltage Doubler Based on Switched CapacitorsYu. Yu. Razuvaev20182018, vol.47, no.7
TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor StructuresK. O. Petrosyants; D. A. Popov; D. V. Bykov20182018, vol.47, no.7
Calculation of the Influence of Shunt Parameters on thedV/dtEffect in Power PhotothyristorsD. S. Silkin; V. P. Paderov20182018, vol.47, no.7
Thermoelectric Model of the InGaN/GaN Light Emission Diode with Allowance for the Substrate Heterostructure EffectV. A. Sergeev; A. M. Hodakov20182018, vol.47, no.7
Design Automation Technique of Silicon Bandgap Voltage ReferenceV. G. Ivanov; V. V. Losev20182018, vol.47, no.7
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