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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2018, vol.47, no.1 2018, vol.47, no.2 2018, vol.47, no.3 2018, vol.47, no.4 2018, vol.47, no.5 2018, vol.47, no.6
2018, vol.47, no.7 2018, vol.47, no.8

题名作者出版年年卷期
Investigation of a Capacitor Array of a Composite Capacitive Touch PanelA. I. Vlasov; A. I. Krivoshein; D. S. Terent’ev; V. A. Shakhnov20182018, vol.47, no.5
The Model of the Process of the Chemical Mechanical Polishing of the Copper Metallization, Based on the Formation of the Passivation LayerT. M. Makhviladze; M. E. Sarychev20182018, vol.47, no.5
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz RadiationV. V. Vyurkov; R. R. Khabutdinov; A. B. Nemtsov; I. A. Semenikhin; M. K. Rudenko; K. V. Rudenko; V. F. Lukichev20182018, vol.47, no.5
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking MechanismI. V. Uvarov; A. N. Kupriyanov20182018, vol.47, no.5
Applications of the Technology of Fast Neutral Particle Beams in Micro- and NanoelectronicsYu. P. Maishev; V. P. Kudrya20182018, vol.47, no.5
Reliability Investigation of 0.18-μm SOI MOS Transistors at High TemperaturesA. S. Benediktov; P. V. Ignatov; A. A. Mikhailov; A. G. Potupchik20182018, vol.47, no.5
Nanosecond-Pulse Annealing of Heavily Doped Ge:Sb Layers on Ge SubstratesR. I. Batalov; R. M. Bayazitov; H. A. Novikov; I. A. Faizrakhmanov; V. A. Shustov; G. D. Ivlev20182018, vol.47, no.5
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a LaserA. V. Tsukanov; V. G. Chekmachev20182018, vol.47, no.5
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical DimensionA. V. Myakonkikh; K. Yu. Kuvaev; A. A. Tatarintsev; N. A. Orlikovskii; K. V. Rudenko; O. P. Guschin; E. S. Gornev20182018, vol.47, no.5



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