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期刊


ISSN0734-2101
刊名Journal of Vacuum Science & Technology
参考译名真空科学与技术，A辑：真空、表面与膜
收藏年代2000～2013



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013

2002, vol.20, no.1 2002, vol.20, no.2 2002, vol.20, no.3 2002, vol.20, no.4 2002, vol.20, no.5 2002, vol.20, no.6

题名作者出版年年卷期
Magnetic and structural properties of Fe, Ni, and Mn-implanted SiCN. Theodoropoulou; A. F. Hebard; S. N. G. Chu; M. E. Overberg; C. R. Abernathy; S. J. Pearton; R. G. Wilson; J. M. Zavada; Y. D. Park20022002, vol.20, no.3
Initial growth and texture formation during reactive magnetron sputtering of TiN on Si(111)T. Q. Li; S. Noda; Y. Tsuji; T. Ohsawa; H. Komiyama20022002, vol.20, no.3
Effect of interfacial interactions on the initial growth of Cu on clean SiO{sub}2 and 3-mercaptopropyltrimethoxysilane-modified SiO{sub}2 substratesMinghui Hu; Suguru Noda; Yoshiko Tsuji; Tatsuya Okubo; Yukio Yamaguchi; Hiroshi Komiyama20022002, vol.20, no.3
Faraday cup detector array with electronic multiplexing for multichannel mass spectrometryA. A. Scheidemann; R. B. Darling; F. J. Schumacher; A. Isakharov20022002, vol.20, no.3
Formation and oxidation properties of (Ti{sub}(1-x)Al{sub}x)N thin films prepared by dc reactive sputteringY. Matsui; M. Hiratani; Y. Nakamura; I. Asano; F. Yano20022002, vol.20, no.3
In-situ measurement of magnetostrictive coefficient and elastic properties for thin films during growthXuesong Jin; C. D. Kim; Y. P. Lee; Y. Zhou20022002, vol.20, no.3
Characterization of gate oxynitrides by means of time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, quantification of nitrogenS. Ferrari; M. Perego; M. Fanciulli20022002, vol.20, no.3
Preparation of high-pressure phase boron nitride films by physical vapor depositionP. W. Zhu; Z. He; Y. Z. Zhao; D. M. Li; H. W. Liu; G. T. Zou20022002, vol.20, no.3
Diamondlike carbon deposition on plastic films by plasma source ion implantationT. Tanaka; M. Yoshida; M. Shinohara; T. Takagi20022002, vol.20, no.3
Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputteringT. Seino; T. Sato20022002, vol.20, no.3
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