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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
High-frequency AlGaN/GaN heterostructure FETsK. Inoue; Y. Ikeda; H. Masato; T. Matsuno; K. Nishii20002000, vol.100, no.148
Extraction of GaAs/InGaP HBT small-signal equivalent circuit based on a genetic algorithmD. S. Chang; M. K. Rhee; J. S. Moon; K. S. Yoon; C. S. Park20002000, vol.100, no.148
A new cold PHEMT equivalent circuit for extracting extrinsic resistanceD. S. Park; H. C. Cho; Y. S. Chae; J. K. Rhee20002000, vol.100, no.148
Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN filmsJ. W. Shin; Y. S. Yoon; S. D. Lee; H. C. Park; J. K. Rhee20002000, vol.100, no.148
Optical control of p-channel MODFETH. J. Kim; I. K. Han; J. I. Lee; D. M. Kim20002000, vol.100, no.148
Improvement of memory windows in YMnO{sub}3/Si ferroelectric gate FETYong Tae Kim; Ik-Soo Kim; Young K. Park20002000, vol.100, no.148
Optimization of device parameters for ferroelectric-gate FETs using SrBi{sub}2Ta{sub}2O{sub}9 and SrTa{sub}2O{sub}6/SiON buffer layerEisuke Tokumitsu; Kojiro Okamoto; Hiroshi Ishiwara20002000, vol.100, no.148
Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (triangular voltage sweep) methodKwang-Ho Kim; Yong-Seong Kim; Soon-Won Jung; Jin-Kyu Kim; Nam-Yeal Lee; Sang Hyun Jeong; Byung-Gon Yu; Won-Jae Lee; In Kyu You; Yil-Suk Yang20002000, vol.100, no.148
Ferroelectric sputtering technology for high-volume ferroelectric memory productionKoukou Suu; Yusuke Miyaguchi; T. Masuda; Y. Nishioka; Fan Chu20002000, vol.100, no.148
Plasma-MOCVD derived SrBi{sub}2Ta{sub}2O{sub}9 capacitors for low voltage operationB. K. Moon; K. Hiornaka; C. Isobe; T. Nishihara; S. Hishikawa20002000, vol.100, no.148
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