先进制造业知识服务平台
国家科技图书文献中心机械分馆  工信部产业技术基础公共服务平台  国家中小企业公共服务示范平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:电子装置
收藏年代2000~2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告:电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
High bias voltage operation high power GaAs FP-HFETW. Contrata; K. Matsunaga; K. Ishikura; I. Takenaka; A. Wakejima; K. Ota; M. Kanamori; M. Kuzuhara20002000, vol.100, no.548
Low-distortion and high output power pulse-doped GaAs MESFETs with asymmetric LDD structureK. Nakata; K. Otobe; S. Nakajima20002000, vol.100, no.548
AlGaAs-HBT MMIC power amplifiers for GSM phonesR. Hattori; S. Suzuki; K. Yamamoto; Y. Yamamoto; S. Miyakuni; T. Shimura20002000, vol.100, no.548
A low current consumption two step power control driver MMIC for W-CDMA handsetM. Nakayama; K. Motoyoshi; T. Kitazawa; K. Tara; M. Hagio20002000, vol.100, no.548
High efficiency power amplifier module with novel enhancement-mode heterojunction FETs for wide-band CDMA handsetsYasunori Bito; Takehiko Kato; Teruhisa Kato; Naotaka Iwata20002000, vol.100, no.548
Analysis of class-F and inverse class-F amplifiersAkira Inoue; Tetsuya Heima; Akira Ohta; Ryo Hattori; Yasuo Mitsui20002000, vol.100, no.548
60-GHz coplanar MMIC LNA using AlAs/InAs superlattice-inserted InP-heterojunction FETsA. Fujihara; H. Miyamoto; K. Yamanoguchi; K. Onda; E. Mizuki; Y. Nakayama; N. Samoto; S. Tanaka20002000, vol.100, no.548
Ultra-short T-shaped gate fabrication technique for sub-millimeter-wave InP-HEMTs: optimization of process conditionsKeisuke Shinohara; Nobumitsu Hirose; Masataka Higashiwaki; Toshiaki Matsui; Yoshimi Yamashita; Kouki Hikosaka; Takashi Mimura; Satoshi Hiyamizu20002000, vol.100, no.548
A report on the 30th European microwave conference (30th EuMC)O. Hashimoto; Y. Hirachi; M. Sanagi; T. Nishino; H. Shimoda; Y. Amano; E. Kawakami; M. Hanazawa20002000, vol.100, no.548