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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
Photoluminescence properties of Eu implanted GaNYasuo Nakanishi; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh20002000, vol.100, no.57
Crystalline quality of AlGaInN quaternary alloys grown by MOVPEMasayoshi Kosaki; Youhei Yukawa; Michihiko Kariya; Shugo Nitta; Shigeo Yamaguchi; Hisaki Kato; Hiroshi Amano; Isamu Akasaki20002000, vol.100, no.57
Stress relief in Al{sub}xGa{sub}(1-x)N/GaN heterostructure measured by in-situ stress monitoringShinji Terao; Motoaki Iwaya; Ryo Nakamura; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki20002000, vol.100, no.57
Epitaxial growth of GaN film on the lattice matched LSAT substrateK. Yoshimura; M. Sumiya; H. Fujioka; S. Fuke20002000, vol.100, no.57
GaN growth on sapphire substrates using Al buffer layerK. Tanaka; K. Kuwahara; K. Ohtuka; M. Sumiya; Y. Takano; S. Fuke20002000, vol.100, no.57
Growth experiments of GaN crystals from wetting solutionAkira Tanaka; Toshiya Murakami; Hironobu Katsuno20002000, vol.100, no.57
Reduction of dislocation density in GaN using FACELO (facet controlled epitaxial lateral overgrowth)Hiromitsu Mizutani; Katsuya Nishiyama; Atsushi Motogaito; Hideto Miyake; Kazumasa Hiramatsu Yasushi Iyechika; Takayoshi Maeda20002000, vol.100, no.57
Fabrication and characterization of GaN with buried WN{sub}x contact by ELOMasahiro Haino; Motoo Yamaguchi; Atushi Motogaito; Hideto Miyake; Kazumasa Hiramatsu; Nobuhiko Sawaki; Yasusi Iyechika; Takayoshi Maeda20002000, vol.100, no.57
GaN Schottky diode characterization and recovering with etching damage by RIEMasaharu Nakaji; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno20002000, vol.100, no.57
Silicon carbide power MOSFETsRajesh Kumar Malhan20002000, vol.100, no.57
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