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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2022

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
Characterization of plasma-induced defects in InPT. Honda; M. Suhara; T. Okumura20002000, vol.100, no.236
The passivation effects of V coulumn elements (Bi, Sb) on InPShinya Morikita; Hideaki Ikoma20002000, vol.100, no.236
Highly reliable Pd-based ohmic contacts of p-type InPAkira Yamaguchi; Hirokuni Asamizu; Tadashi Saitoh; Yasuhiro Iguchi; Yasuo Koide; Masanori Murakami20002000, vol.100, no.236
Formation of ohmic contact in Cu-Zr/n-InP system by rapid thermal annealingMayumi B. Takeyama; Junichi Itai; Atsushi Noya; Tamotsu Hashizume; Hideki Hasegawa20002000, vol.100, no.236
Electrical properties and interfacial reaction in Cu/n-InP contactMayumi B. Takeyama; Junichi Itai; Atsushi Noya; Tamotsu Hashizume; Seiya Kasai; Hideki Hasegawa20002000, vol.100, no.236
Brightness of scanning electron microscope images vs. thickness of thin SiO{sub}2 layers on Si SubstratesYukihiro Kita; Yuuki Kasai; Kouichi Iiyama; Saburo Takamiya20002000, vol.100, no.236
Noncontact evaluation of surface and interface of SOI wafersK. Eguchi; A. En; M. Suhara; T. Okumura20002000, vol.100, no.236
Fowler-Nordheim current injection and stress-induced leakage current characteristics of Si oxynitride grown in magnetically excited plasmaNobuo Imaoka; Hideaki Ikom20002000, vol.100, no.236
Evaluation of phase coherent length using double-barrier resonant tunneling diodesM. Nagase; K. Furuya; N. Machida20002000, vol.100, no.236
A study of a evaluation method of band discontinuity by resonant tunnel diodesSusumu Ohki; Michihiko Suhara; Tugunori Okumura20002000, vol.100, no.236



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